Method for improving frequency characteristic of common-source operational amplifier

Abstract

The invention provides a method for improving the frequency characteristic of a common-source operational amplifier. The method comprises the following steps of: etching at the first time, namely performing high transverse etching and low longitudinal etching on a spacer thin film above a first laser detector diode (LDD) structure for forming a source end and a spacer thin film which is positioned above a grid and arranged close to the first LDD structure; etching at the second time, simultaneously performing low transverse etching and high longitudinal etching on the spacer thin films corresponding to the upper sides of the source end, a drain end and the grid, so that a grid spacer corresponding to the upper side of the drain end is thickened and the grid spacer corresponding to the upper side of the source end is thinned; and high-doping and annealing exposed parts of the first LDD structure and a second LDD structure for forming the drain end respectively so as to form high-doped ion regions corresponding to the drain end and the source end respectively. The invention also provides a semiconductor device manufactured by using the method. The frequency response characteristic is improved.

Description

technical field [0001] The present application relates to the manufacture of semiconductor devices, more precisely, the present invention relates to a semiconductor device spacer etching method and semiconductor devices manufactured using the method. Background technique [0002] Complementary metal-oxide-semiconductor (CMOS) operational amplifiers are one of the building blocks of various circuits. With the development of information technology, the requirements for the processing speed of information data are getting higher and higher, and the requirements for the frequency response characteristics of the CMOS operational amplifiers used in it are also getting higher and higher. [0003] However, the parasitic capacitance of CMOS devices will produce more and more negative effects as the operating frequency increases. Therefore, how to reduce the influence of parasitic capacitance on CMOS operational amplifiers has become the key to improving the frequency response charact...

AI Technical Summary

Problems solved by technology

There is a parasitic overlapping capacitance C between the output terminal and the input terminal of the common-source operational amplifier, that is, between the gate terminal and the drain terminal of the NMOS device 2 gd , which forms a feedback capacitor, therefore, due to the Miller effect, the parasitic overlap capacitance C gd will seriously degrade the frequency response characteristics of this common-source op amp

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