Plasma etching method for fabricating uniform fine patterns

Abstract

The invention discloses a plasma etching method for fabricating uniform fine patterns, wherein the process for carrying out the semiconductor trimming process includes: step A: first gas is used as a plasma source to trim a hard mask layer; step B: a hard mask layer solidification process is carried out to keep a pattern stable, so that the pattern cannot be deformed; step C: second gas is used as the plasma source to trim the hard mask layer; and step D: third gas is used as the plasma source to trim the hard mask layer; and the first gas, the second gas and the third gas respectively have different microloading effects in order to reduce the difference between the characteristic dimensions of a dense region and an open region. By adopting the gases with the different microloading effects to carry out multiple times of trimming and adding the solidification process in the trimming step, the plasma etching method guarantees the stability of the patterns and minimizes the difference between the characteristic dimensions of the dense region and the open region, and thereby a uniform ultrafine structure is obtained.

Description

technical field [0001] The invention relates to a plasma etching method, in particular to a plasma etching method for producing uniform fine patterns. Background technique [0002] In order to increase the operating speed of electronic devices (such as transistors, capacitors, etc.), the features of these devices need to be smaller and smaller in integrated microelectronic circuits. The minimum dimension of the feature of the device is generally known as critical dimension (CD). Critical dimensions (CD) generally include features such as minimum widths of lines, rows, openings, spacing between lines, and the like. [0003] One method of fabricating this feature involves forming a patterned mask, such as a photoresist mask, on the surface of a layer of material beneath a mask, ie, an underlying layer, and then applying a pattern The mask is used as an etch mask to etch the material layer. [0004] Generally, the above-mentioned patterned mask is fabricated through a li...

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Problems solved by technology

[0009] The invention discloses a plasma etching method for making a uniform fine pattern, which is used to solve the problems of small size range of cutting, large difference between dense area and empty area and too long cutting time caused by the one-step cutting process in the prior art. Problems causing patterns to collapse

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