Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate

A cleaning material, viscoelastic technology, applied in the field of apparatus and method for removing particles on a substrate using a viscoelastic cleaning material

Active Publication Date: 2012-03-21
LAM RES CORP
View PDF13 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It should be appreciated that manufacturing operations for flat panel displays suffer from the same disadvantages as integrated circuit manufacturing discussed above

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate
  • Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate
  • Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Detailed description of the preferred embodiment

[0042] Embodiments of materials, methods, and apparatus for cleaning wafer surfaces without damaging surface features are described. The cleaning materials, devices, and methods discussed here have advantages in cleaning patterned substrates with fine features without damaging surface features. The cleaning material is fluid, in a liquid or liquid / gas phase, and deforms around the device features; thus, the cleaning material does not damage the device features. The cleaning material comprises polymers with large molecular weights, such as greater than 10000 g / mol, and traps contaminants on the substrate. In addition, the cleaning material captures the contaminants and does not return the contaminants to the substrate surface. The large molecular weight of the polymer chains enhances the trapping and trapping of particulate pollutants compared to conventional cleaning materials.

[0043] It will be apparent, however, to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiments provide apparatus and methods for removing particles from a substrate surface, especially from a surface of a patterned substrate (or wafer). The cleaning apparatus and methods have advantages in cleaning patterned substrates with fine features without substantially damaging the features on the substrate surface. The cleaning apparatus and methods involve using a viscoelastic cleaning material containing a polymeric compound with large molecular weight, such as greater than 10,000 g / mol. The viscoelastic cleaning material entraps at least a portion of the particles on the substrate surface. The application of a force on the viscoelastic cleaning material over a sufficiently short period time causes the material to exhibit solid-like properties that facilitate removal of the viscoelastic cleaning material along with the entrapped particles. A number of forces can be applied over a short period to access the solid-like nature of the viscoelastic cleaning material. Alternatively, when the temperature of the viscoelastic cleaning material is lowered, the viscoelastic cleaning material also exhibits solid-like properties.

Description

Background technique [0001] In the fabrication of semiconductor devices, such as integrated circuits and memory cells, a series of fabrication operations are performed to define the characteristics of a semiconductor wafer ("wafer"). A wafer (or substrate) includes integrated circuit devices in the form of a multi-level structure defined on a silicon substrate. At the substrate level, transistor devices with diffusion regions are formed. At later levels, interconnect metallization lines are patterned and electrically connected to the transistor devices to define the desired integrated circuit device. Also, the patterned conductive layer is insulated from other conductive layers by a dielectric material. [0002] During a series of manufacturing operations, wafer surfaces are exposed to various types of contaminants. In essence, any material present in a manufacturing operation is a potential source of contamination. For example, sources of contamination may include process...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B08B7/04
CPCB08B5/04H01L21/67051B08B3/08H01L21/02052B08B3/12H01L21/02057B08B7/0014C11D3/3723C11D2111/22
Inventor 马克·纳什·卡瓦古奇大卫·穆伊马克·威尔考克森
Owner LAM RES CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products