Semiconductor device and manufacturing method thereof

Abstract

The invention provides a manufacturing method of a semiconductor device. The method comprises the following steps that: a substrate is provided, wherein the substrate includes a vertical extension MOS transistor region and has a first conductive type; a leak lightly doped region is formed in the substrate of the vertical extension MOS transistor region; a gate structure is formed on the substrate and one side of the gate structure covers a portion of the leak lightly doped region; and a second conductive type ion implantation is carried out on the leak lightly doped region and the substrate by taking the gate structure as a mask layer, so that a leak heavily doped region and a source heavily doped region are formed. According to the invention, a gate structure covers a portion of a leak lightly doped region; and the gate structure is utilized as a mask layer to carry out ion implantation of a leak heavily doped region or a source heavily doped region; therefore, a distance between the leak heavily doped region and a side wall is maintained to be stable; and thus, a leak source conduction resistance value and a drive current are maintained to be stable, so that stability of a manufacturing process of a semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Extended Drain Metal Oxide Semiconductor (DEMOS) is usually used to make power semiconductor products for high-power switching applications, and has a wide range of applications in liquid crystal panel drive, power management and other fields. [0003] The Chinese patent application with the patent application number 200880008643.3 provides a method for forming the extended drain metal oxide semiconductor (DEMOS), as follows: [0004] Such as figure 1 As shown, a substrate 01 is provided, and the substrate 01 can be single crystal silicon or silicon germanium, or silicon-on-insulator (SOI), or other materials, such as III-V compounds such as gallium arsenide semiconductor. [0005] Wherein, an N-type well and a channel region (not marked) are formed in the substrate 01 . An isol...

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Problems solved by technology

For example, if the distance S is increased, the on-resistance will increase, thereby reducing the driving current of the DEMOS device; on the contrary, if the distance S is reduced, the on-resistance will be reduced, thereby increasing the driving current of the DEMOS device

[0010] At the same time, in the prior art, after the ion implantation of the lightly doped drain region 11, it is impossible to introduce annealing, such as high-temperature advancement of the furnace tube, so that the implanted ions are redistributed by thermal diffusion.

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