Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate

A 100w-9db, aluminum nitride ceramic technology, applied in the direction of electrical components, circuits, waveguide devices, etc., can solve the problems of poor high and low temperature impact resistance, attenuation accuracy that cannot meet the requirements, impedance and attenuation accuracy deviation, etc. Achieve the effects of increasing high and low temperature impact resistance, avoiding resistance quenching, and improving design

Inactive Publication Date: 2012-02-22
苏州市新诚氏通讯电子股份有限公司
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above problems are mainly due to the design of the domestic 100W-9dB attenuator, and the poor performance of high and low temperature impact resistance
After completing the high and low temperature impact test, the impedance and attenuation accuracy deviated from the actual required range, so that the attenuation accuracy could not meet the requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate
  • Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate
  • Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0018] Such as figure 1 , 2 As shown, the high-power aluminum nitride ceramic substrate 100W-9dB attenuator includes an aluminum nitride substrate 1, and a conductive layer 5 is printed on the back of the aluminum nitride substrate 1, and the conductive layer is printed by printing silver paste. The front side of the aluminum nitride substrate 1 is printed with resistors R1, R2, R3, R4, R5 and silver paste wire 2, and the silver paste wire 2 connects the resistors R1, R2, R3, R4, R5 to form a π-shaped attenuation circuit A protective glass film 3 is printed on the resistors R1, R2, R3, R4, and R5, and the protective glass film 3 is used to protect the resistors R1, R2, R3, R4, and R5. Also be printed with one deck black protective film 4 on the upper surface of whole circuit namely silver paste conductor 2 and glass protective film 3, black...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a large-power 100 W-9 dB attenuation sheet with an aluminum nitride ceramic substrate. The sheet comprises an aluminum nitride substrate, wherein a conductor layer is printed at the back side of the aluminum nitride substrate; a plurality of resistors and silver paste lead wires are printed at the front side of the aluminum nitride substrate; the silver paste lead wires are connected with the resistors to form an attenuation circuit; and glass protective films are printed on the resistors. The needed attenuation value is obtained by changing the size of resistance value and surface resistivity in the attenuation circuit and good stationary wave properties can be obtained through the design of the lead wires. According to the large-power 100 W-9 dB attenuation sheet with the aluminum nitride ceramic substrate provided by the invention, the area of the resistors is enlarged, the high and low temperature impact resistance of the attenuation sheet is increased and the performance indexes of products meet the requirements. Meanwhile, the quenching damages to the resistors at a high temperature when an output end is welded with the lead wires are avoided, the risk of damaging the resistors in the actual use process due to quenching the resistors is avoided, the design of the circuit is improved, the attenuation precision reaches 9+ / -0.8 dB within 3 G (Gigabyte) and the standing wave satisfies the market demand, so that the products can be applied to 3G (The 3rd Generation Telecommunication) networks.

Description

technical field [0001] The invention relates to an aluminum nitride ceramic attenuation sheet, in particular to a high-power aluminum nitride ceramic substrate 100W-9dB attenuation sheet. Background technique [0002] At present, most communication base stations use high-power ceramic load chips to absorb the reverse input power of communication components. High-power ceramic load chips can only simply consume and absorb excess power, but cannot monitor the working conditions of the base station in real time. When the base station fails, it cannot be judged in time, and there is no protection for the equipment. [0003] The attenuator can not only absorb the reverse input power of the communication components in the communication base station, but also extract some signals from the communication components, monitor the base station in real time, and protect the equipment. However, the current domestic 100W-9dB aluminum nitride The attenuation accuracy of ceramic attenuators...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/22
Inventor 郝敏
Owner 苏州市新诚氏通讯电子股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com