Method for estimation of radiation heat loss of polysilicon CVD (chemical vapor deposition) reactor

Abstract

The invention relates to a method for estimation of radiation heat loss of a polysilicon CVD (chemical vapor deposition) reactor. The key technical parameter of radiation heat exchange, i.e. angle factor, is obtained accurately in a Monte Carlo method, and then the radiation heat loss in the CVD reactor can be calculated accurately. The radiation heat loss of the polysilicon CVD reactor can be estimated rapidly and accurately, and the method has a wide scope of application and is particularly suitable for reactors with any number of silicon cores and complex structures. When the method for estimation of the radiation heat loss is adopted, more accurate radiation heat leakage data can be provided for operators of the polysilicon CVD reactor, necessary feedback information can be provided for accurate control and even automated control of the working current, the temperature of the silicon cores in reduction furnaces can be controlled in a more accurate and effective range, the power consumption for reaction can be saved greatly, the quality of polysilicon products and the yield of production can be improved, and great economic benefits and social value can be produced for enterprises. The method is also applicable to estimation of radiation heat leakage of other reactors with complex structures.

Description

technical field [0001] The invention belongs to the field of metallurgy, metal and semiconductor materials, and relates to a method for estimating the radiative heat loss absorbed by the wall surface of the CVD reactor radiated by a silicon rod (heating body) in a CVD reactor by Monte Carlo method, in particular to a method Estimation method for radiative heat loss in a polysilicon CVD reactor. Background technique [0002] Currently, as energy demand continues to increase around the world, higher energy prices and public concerns about global warming have opened up the market for solar cells. As a key material in the semiconductor industry and the photovoltaic industry, high-purity polysilicon has become an irreplaceable strategic resource due to its unique and excellent characteristics. The improved Siemens method is currently the mainstream process for polysilicon production at home and abroad, but the domestic production scale, product quality, energy consumption, envir...

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Problems solved by technology

[0005] The purpose of the present invention is to aim at the inaccurate estimation of the radiant heat loss absorbed by the wall surface of the CVD reactor due to the silicon rod (heating body) radiation in the CVD reactor during the production of polysilicon by the reduction method of trichlorosilane in the industry at present. There are many problems such as difficult temperature control of the silicon core (heating body) in the reduction furnace, high energy consumption, and poor stability of polysilicon production. A method for estimating the radiative heat loss of the polysilicon CVD reactor for the radiative heat loss of the CVD reactor is proposed.

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