Flash memory cell and method of forming same
A flash memory unit, p-type technology, applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve the problem of unstable storage performance of flash memory unit, and achieve the effect of improving reliability
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[0034] It can be known from the background art that the storage performance of the existing flash memory unit will decrease after being programmed many times.
[0035] The inventors conducted research on the above problems and found that when programming the existing flash memory cells, under the joint action of the drain voltage applied to the drain and the gate voltage applied to the control gate, hot electrons flow from the source to the control gate. The drain migrates and is implanted into the floating gate through the tunnel oxide as it moves. In the process of injecting hot electrons into the floating gate, most of the hot electrons cross to the floating gate from the part of the tunnel oxide layer close to the drain or facing the drain, and the hot electrons are easy to be damaged during multiple programming operations. The part of the tunnel oxide layer close to the drain or facing the drain causes damage, such as stress effects and trap charges; in subsequent program...
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