Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flash memory cell and method of forming same

A flash memory unit, p-type technology, applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve the problem of unstable storage performance of flash memory unit, and achieve the effect of improving reliability

Active Publication Date: 2016-02-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problem solved by the present invention is to provide a flash memory unit and its forming method to solve the problem of unstable storage performance of the existing flash memory unit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory cell and method of forming same
  • Flash memory cell and method of forming same
  • Flash memory cell and method of forming same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] It can be known from the background art that the storage performance of the existing flash memory unit will decrease after being programmed many times.

[0035] The inventors conducted research on the above problems and found that when programming the existing flash memory cells, under the joint action of the drain voltage applied to the drain and the gate voltage applied to the control gate, hot electrons flow from the source to the control gate. The drain migrates and is implanted into the floating gate through the tunnel oxide as it moves. In the process of injecting hot electrons into the floating gate, most of the hot electrons cross to the floating gate from the part of the tunnel oxide layer close to the drain or facing the drain, and the hot electrons are easy to be damaged during multiple programming operations. The part of the tunnel oxide layer close to the drain or facing the drain causes damage, such as stress effects and trap charges; in subsequent program...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments of the present invention provide a flash memory unit and a method for forming the same. The flash memory unit provided by the embodiment of the present invention includes: a semiconductor substrate; and a gate structure located on the surface of the semiconductor substrate. The gate structure includes tunnels formed in sequence. Through oxide layer, floating gate, isolation oxide layer and control gate; source and drain located in the semiconductor substrate on both sides of the gate structure; the floating gate has a first p-type doping close to the drain terminal and the second p-type doped terminal close to the source, and the doping type of other parts is n-type. The present invention can improve the storage performance of the flash memory unit.

Description

technical field [0001] The invention relates to a semiconductor device and its forming method, in particular to a flash memory unit and its forming method. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits, among which storage devices are an important type of digital circuits. In recent years, among storage devices, flash memory (flash memory, flash memory unit for short) has developed particularly rapidly. The main feature of the flash memory unit is that it can keep the stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Has been widely used. [0003] The structure of the flash memory cell is different from that of conventional MOS transistors. The gate (gate) of a conventional MOS transistor and the conductive channel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L21/8247H01L21/265H10B69/00
Inventor 曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com