Monolayer, b-axis oriented zsm-5 zeolite coating material on porous silicon carbide surface and its preparation
A technology of ZSM-5 and porous silicon carbide, which is applied to the growth of polycrystalline materials, catalyst activation/preparation, and hydrocarbon production from oxygen-containing organic compounds. Effects of carbon phenomenon, prolonging catalyst life, and improving selectivity
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Embodiment 1
[0037] Foamed silicon carbide carrier (in this embodiment, the rib surface of the foamed silicon carbide carrier is a porous layer formed by overlapping silicon carbide particles, the pore diameter of the porous layer is 10-20 microns, the thickness of the porous layer is 30-50 microns, and the silicon carbide The porosity of surface porous layer is 30%, see Fig. 1) the preparation method of surface monolayer, b-axis orientation ZSM-5 type zeolite molecular sieve coating material:
[0038] First, a zeolite seed colloid was grown in situ. Mix ethyl orthosilicate, tetrapropylammonium hydroxide, and deionized water in a molar ratio of 1:0.32:29. After the tetraethyl orthosilicate was completely hydrolyzed, the foamed silicon carbide carrier and the above solution were placed in a reaction kettle, and hydrothermally synthesized at 130° C. for 3.5 hours. After the zeolite seed crystal colloid was grown in situ, the excess sol was shaken off with a centrifuge, and dried at room tem...
Embodiment 2
[0040] Foamed silicon carbide carrier (in this embodiment, the rib surface of the foamed silicon carbide carrier is a porous layer formed by overlapping silicon carbide particles, the pore diameter of the porous layer is 30-40 microns, the thickness of the porous layer is 80-100 microns, and the silicon carbide The porosity of the surface porous layer is 60%) The preparation method of surface monolayer, b-axis orientation ZSM-5 type zeolite molecular sieve coating material:
[0041] The method for growing zeolite seed crystal colloid in situ is the same as that in Example 1. To prepare a secondary growth solution, mix ethyl orthosilicate, tetrapropylammonium hydroxide, sodium metaaluminate, and deionized water in a molar ratio of 1:0.17:0.065:200. The weight ratio of foamed silicon carbide ceramics to the reaction solution is 1:25, and the foamed silicon carbide ceramics is fixed at 1 cm away from the bottom of the reactor with a polytetrafluoroethylene support frame; the volu...
Embodiment 3
[0043] Honeycomb silicon carbide carrier (in this embodiment, the surface of the hole wall of the honeycomb silicon carbide carrier is a porous layer formed by overlapping silicon carbide particles, the pore diameter of the porous layer is 5 to 10 microns, and the thickness of the porous layer is 20 to 30 microns. The porosity of silicon surface porous layer is 60%) The preparation method of surface monolayer, b-axis orientation ZSM-5 type zeolite molecular sieve coating material:
[0044] The method for growing zeolite seed crystal colloid in situ is the same as that in Example 1. To prepare a secondary growth solution, mix ethyl orthosilicate, tetrapropylammonium hydroxide, sodium metaaluminate, and deionized water in a molar ratio of 1:0.17:0.065:200. The weight ratio of the honeycomb silicon carbide ceramics to the reaction solution is 1:25, and the honeycomb silicon carbide ceramics is fixed at 1 cm from the bottom of the reactor with a polytetrafluoroethylene support fra...
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