Aggregation of aligned single-walled carbon nanotubes, aggregate of massive aligned single-walled carbon nanotubes, aggregate of aligned single-walled carbon nanotubes in powder form, and manufacturing method thereof
A single-walled carbon nanotube, carbon nanotube technology, applied in the direction of oriented carbon nanotubes, single-walled carbon nanotubes, carbon nanotubes, etc., can solve the problems of easy deactivation of catalysts, growth, and CNT inability, and achieve excellent shape. Processability and the effect of large specific surface area
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Embodiment 1
[0285] Next, the aligned single-layer CNT aggregate of Example 1 of the present invention will be described in more detail. The properties of the aligned single-layer CNT aggregate produced in Example 1 depend on the production conditions, and the following property values under the production conditions of Example 1 are: weight density 0.03 g / cm 3 、BET-specific surface area 1200m 2 / g, G / D=10, average outer diameter 2.5nm, half width 2nm, carbon purity 99.9%, Herman orientation coefficient 0.8.
[0286] The manufacturing process of Example 1 is shown in Figure 37 in the flow chart. It includes a catalyst substrate fabrication process and a single-layer CNT synthesis process. Made of alumina (Al 2 o 3 ) is formed on a silicon substrate ((2 cm square, 0.6 mm thick), with a 600 nm oxide film) by RF sputtering to form a co-catalyst layer with a thickness of 40 nm. A 1-nm-thick catalyst layer made of iron (Fe) (catalyst substrate production process). In addition, the det...
Embodiment 2
[0297] Next, another method for producing the aligned single-layer CNT aggregate according to Example 2 of the present invention will be described. The flowchart of the manufacturing process of Example 2 is shown in Figure 43 , the detailed process conditions are expressed in Figure 44 middle.
[0298] Prepare to be vapor-deposited with the same catalyst metal (Al 2 o 3 +Fe) silicon substrate 32, the substrate 32 is transported and arranged to keep the temperature in the furnace as room temperature and the pressure in the furnace at 1.02×10 5 In the synthesis furnace 33 of the CVD apparatus 31 of Pa (substrate transfer process S21), introduce He (atmosphere gas) 600 sccm, H 2 (Reducing gas) 400 sccm, the temperature inside the furnace was raised for 15 minutes at a rate of temperature increase of 50° C. / minute (forming step S2 ). That is, the biggest difference between Example 2 and the above-mentioned Example 1 is that the temperature inside the furnace was raised afte...
Embodiment 3
[0305] Next, the aligned single-layer CNT aggregate of the present invention and its production method when granular or linear bodies are used as the base material will be described.
[0306] The manufacturing method of Example 3 was the same as that of Example 1, but instead of the silicon substrate of Example 1, a metal mesh made of spherical granular bodies or SUS304 linear bodies was used as the substrate. In addition, in the formation of the catalyst layer, when granular bodies are used, sputtering is performed while rotating the granular bodies.
[0307] A digital photograph of an aligned single-layer CNT aggregate grown on alumina particles with an average diameter of 3 mm is shown in Figure 45 middle. From this, it can be seen that an aligned single-layer CNT aggregate with a height dimension of several hundreds of μm can be produced on alumina particles. In addition, a digital photograph of an aligned single-layer CNT aggregate grown on silica particles with an ave...
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