Heavy-current whole-wafer total-pressure-contact flat-plate encapsulated IGBT (Insulated Gate Bipolar Transistor) and manufacturing method thereof
A flat-panel, high-current technology, used in semiconductor/solid-state device manufacturing, circuits, transistors, etc., can solve the problem of heat dissipation performance, thermal shock resistance, low current conduction capability and reliability, and limit large-capacity power electronic converter systems. Application, heat dissipation performance and low thermal shock resistance, to achieve the effect of simple gate voltage control, improved wafer area utilization, improved thermal conductivity and thermal shock resistance
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[0029] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0030] Each known conventional IGBT wafer contains dozens to hundreds of identical IGBT chips, and these IGBT chips will be cut into rectangular independent chips after the semiconductor wafer process and testing are completed. Each IGBT chip is usually composed of thousands of IGBT units connected in parallel, and the emitter, gate and collector of each unit are connected together through metal or polysilicon film. In addition, part of the chip area of each IGBT chip along its edge is used as an edge electric field stop area to ensure the breakdown voltage of the device.
[0031] The present invention provides a large current whole wafer IGBT device, the circuit of which is as follows: figure 1 shown. As a single device, the IGBT wafer 1 is composed of a plurality of independent IGBT device regions 2 , and each IGBT device region 2 is comp...
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