Semiconductor eevice and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a first base material possessing a first inner connection structure and a second base material possessing a second inner connection structure. The first inner connection structure is in connection with the second inner connection structure, and a first width of the first inner connection structure is different fro that of the second inner connection structure. The invention provides a lug structure used foe connecting one base material with another one. A conductive cylinder is formed on the first base material such that the conductive cylinder has a different width from the that of a contact surface of the second base material. In one embodiment, the conductive cylinder of the first base material is a trapezoid or taper side wall, and thereby providing a conductive cylinder, the top of which is wider the the bottom. The base materials can be integrated circuit chips, pinboards, printed circuit boards, high density interconnectors and etc. The invention can reduce the delamination caused by Junction stress.

Description

technical field [0001] The present invention relates to an integrated circuit, a semiconductor device and a manufacturing method thereof, in particular to a bump structure for a semiconductor chip. Background technique [0002] Since the invention of the integrated circuit, the semiconductor industry has experienced rapid growth due to the continuous improvement in the integration of various electronic components (eg, transistors, diodes, resistors, capacitors, etc.). Primarily, these improvements in density come from repeated reductions in the minimum device size, allowing more devices to be integrated per unit area. [0003] These improvements in density are still two-dimensional (2D) in nature, with the volume occupied by integrated circuits being substantially only on the surface of the semiconductor wafer. Although drastic improvements in lithography have made the fabrication of two-dimensional integrated circuits feasible, there are still physical limits to the densit...

AI Technical Summary

Problems solved by technology

Misalignment can cause a short circuit between contacts and / or damage to the device

[0006] In addition, the differences in materials and their corresponding thermal expansion coefficients create stresses at their junctions, which can crack the joints and / or cause other problems, such as delamination of the dielectric layer.

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