High-concentration erbium aluminum co-doped amplifying optical fiber based on atomic layer deposition technology and manufacturing method thereof

An atomic layer deposition, high-concentration technology, applied in the direction of multi-layer core/cladding fiber, cladding fiber, coating, etc. Eliminate problems such as annihilation, and achieve the effect of simple structure, high amplification efficiency, and wide gain spectrum

Inactive Publication Date: 2011-11-23
SHANGHAI UNIV
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  • Abstract
  • Description
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Problems solved by technology

However, with the rapid development of optical communication technology, the performance of existing amplifying optical fibers can no longer meet the needs of broadband and high-speed communication
Traditional optical fiber doping technologies mainly include gas phase and liquid phase technologies based on modified chemical vapor deposition (MCVD), but because most of their doping materials exist in the form of submicron particles, resulting in poor uniformity, erbium-doped When the doping concentration of optical fiber is high, it is easy to aggregate to form clusters, causing concentration quenching, photo-induced darkening and other phenomena, which restricts its optical amplification performance

Method used

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  • High-concentration erbium aluminum co-doped amplifying optical fiber based on atomic layer deposition technology and manufacturing method thereof
  • High-concentration erbium aluminum co-doped amplifying optical fiber based on atomic layer deposition technology and manufacturing method thereof
  • High-concentration erbium aluminum co-doped amplifying optical fiber based on atomic layer deposition technology and manufacturing method thereof

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Effect test

Embodiment 1

[0022] see figure 1 , The present invention is a high-concentration erbium-aluminum co-doped amplifying fiber based on atomic layer deposition (ALD) technology, which consists of two parts: core (1) and cladding (2). The material of the core (1) is also composed of two parts, pure silica loose layer or doped with a small amount of high refractive index GeO 2 The loose layer (1-1), and the use of ALD technology to alternately deposit an appropriate amount of rare earth element erbium ion and aluminum ion thin film (1-2) with amplifying function. The cladding (2) is made of pure quartz with a low refractive index.

Embodiment 2

[0024] The manufacturing method of high-concentration erbium-aluminum co-doped amplifying optical fiber based on atomic layer deposition technology is used to make the above-mentioned optical fiber, and its manufacturing steps are as follows:

[0025] 1) First, the cladding layer (2) and pure quartz or doped with a small amount of high refractive index GeO are sequentially deposited on the improved chemical vapor deposition (MCVD) rod making machine by vapor deposition method 2 loose layer, and then place the preformed quartz tube in the deposition reaction chamber of the atomic layer deposition (ALD) technology, and then use the ALD technology to alternately deposit Er 2 o 3 and Al 2 o 3 film until the desired thickness is reached; where Er(thd) 3 and O 3 is used to deposit Er 2 o 3 The gas phase precursor of Al(CH 3 ) 3 and O 3 used to grow Al 2 o 3 film. The entire reaction chamber is heated by radiation, and the temperature is uniform and controlled between 300...

Embodiment 3

[0029] This embodiment is basically the same as Embodiment 2, and the special features are as follows:

[0030] see figure 2 , the manufacturing steps of the high-concentration erbium-aluminum co-doped amplifying fiber based on atomic layer deposition technology are as follows:

[0031] 1) Place the preformed quartz tube in the ALD deposition reaction chamber (11), and use radiation heating to keep the temperature of the entire reaction chamber uniform and controlled between 300-400°C.

[0032] 2) Deposit Er on the inner wall of the quartz tube 2 o 3 Film (12), Er(thd) 3 and O 3 used to grow Er 2 o 3 The thin film, the gas phase pulse of the reactive precursor controlled by the inert gas pulse valve, is introduced into the reaction chamber. During the deposition process, the micro-pulse mode is adopted. This pulse mode can avoid excessive reaction precursors from filling the reaction chamber, but at the same time can provide sufficient dose and reaction time to allow ...

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Abstract

The invention relates to a high-concentration erbium aluminum co-doped amplifying optical fiber based on an atomic layer deposition technology and a manufacturing method thereof, and belongs to the technical field of optical fibers. The amplifying optical fiber provided by the invention consists of a fiber core and a cladding, wherein an erbium aluminum mixed film deposited in an atomic layer is positioned in a fiber core structure. In the manufacturing method, the cladding and the partial fiber core material pure silica loose layer are deposited on a special modified chemical vapor deposition (MCVD) bar machine by adopting a chemical vapor deposition method; then Er2O3 and Al2O3 films are alternately deposited on the silica loose layer by utilizing the atomic layer deposition technology, so that an optical fiber preform is obtained; and finally, the optical fiber is drawn. The high-concentration erbium aluminum co-doped amplifying optical fiber based on the atomic layer deposition technology in the invention has the characteristics of good uniformity, high dispersivity, high doping concentration, wide gain spectrum, high amplifying efficiency, simple structure, low cost, easiness for industrial production and the like, and can be used for constructing an optical fiber laser, an optical fiber amplifier, an optical fiber sensor and the like.

Description

technical field [0001] The invention relates to a high-concentration erbium-aluminum co-doped amplifying optical fiber based on atomic layer deposition technology and a manufacturing method thereof, belonging to the technical field of optical fibers. Background technique [0002] As the core component of optical fiber communication, rare earth doped amplifying optical fiber can be used to construct lasers, optical amplifiers, sensors, broadband light sources and other systems. Because of its characteristics of high gain, low noise, high power, wide operating frequency, polarization independence, and small channel crosstalk, it has been widely used in information, national defense, medicine, industry and other fields from simple optical signal amplification. However, with the rapid development of optical communication technology, the performance of existing amplifying optical fibers can no longer meet the needs of broadband and high-speed communication. Traditional optic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/036C23C16/40C23C16/44
Inventor 孙晓岚董艳华李超刘晓虹谢莉彬
Owner SHANGHAI UNIV
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