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Preparation method of LaNi5 film and application thereof

A thin film and characteristic technology, which is applied in the preparation of LaNi5 thin film and the application field of hydrogen sensor, can solve the problems of unsatisfactory industrialization of sensors, difficulty in obtaining accurate stoichiometric ratio, insufficient hydrogen selectivity and sensitivity, etc., and achieve low compactness , easy to make, uniform grain effect

Inactive Publication Date: 2011-10-19
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To improve the performance of hydrogen-sensitive sensors, the sensitivity and reproducibility of hydrogen-sensitive materials play a decisive role. At present, the main problems in the research work on hydrogen-sensitive materials are: the selectivity and sensitivity to hydrogen are not high enough, The industrialization of hydrogen sensitive materials and their corresponding sensors is not ideal
Through research, there is very little about LaNi in the current literature 5 thin film reports, the main reason is that it is difficult to obtain accurate stoichiometric LaNi 5 thin film, so the study of thin film LaNi 5 Alloy preparation method is very necessary

Method used

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  • Preparation method of LaNi5 film and application thereof
  • Preparation method of LaNi5 film and application thereof
  • Preparation method of LaNi5 film and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Using the magnetron radio frequency sputtering method, the specific operation is as follows:

[0037] 1. Cleaning silicon chips

[0038] 2. A Ni film is deposited on the Si substrate by magnetron radio frequency sputtering as a buffer layer. The sputtering conditions were as follows:

[0039] 1. The Ni target with a purity of 99.95% is used as the cathode target; the base distance of the target is 4.55cm;

[0040] 2. The background vacuum is lower than 5.0*10 -4 the following;

[0041] 3. The working gas is an inert gas——Ar gas, and the working pressure is 0.5Pa;

[0042] 4. Pre-sputtering is required for about 15 minutes before depositing Ni to clean the surface of the Ni target; when depositing Ni, the power is 80W, and the temperature is room temperature; the deposition time is 10 minutes, and a Ni film with a thickness of about 450nm is prepared as a buffer layer.

[0043] 3. Making lanthanum-nickel fan-shaped targets.

[0044] 1. Cut Ni sheets with a purity o...

example 2

[0052] Preparation of LaNi by Magnetron RF Sputtering 5 Thin film, the first, second, third steps are identical with example one. The sputtering conditions of the fourth step are: the lanthanum-nickel fan-shaped target is used as the cathode target, the background vacuum is lower than 5.0*10-4,

[0053] target base distance

Air pressure (Ar)

power

temperature

time

4.9cm

0.2Pa

150W

700℃

20min

[0054] Prepared LaNi 5 The thickness of the film is 500nm, the density is low, the crystal grains are uniform, the grain size is about 50nm, and the specific surface area is large, which is beneficial to hydrogen absorption / desorption.

[0055] The prepared LaNi 5 After the surface treatment of the film, the sample is placed in the air atmosphere at room temperature, and when different flow rates of hydrogen (30ml / min, 60ml / min, 160ml / min) pass through the surface of the sample, record the time and the resistance of the sample, ...

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Abstract

The invention discloses a preparation method of a LaNi5 film and application thereof in the aspect of a hydrogen sensitive sensor. The preparation method comprises the steps of: manufacturing a layer of Ni film as a buffer layer on a Si substrate; depositing a LaNi5 film on the Ni film by using a radio frequency magnetron sputtering method, wherein the target material for depositing the LaNi5 film is a fan-shaped target consisting of a La target and a fan-shaped Ni sheet, and the sputtering conditions comprise power of 120-200W, temperature between 350 DEG C and 500 DEG C, target-substrate distance of 3.5 cm, air pressure of 0.6 Pa and time of 20 minutes. The prepared LaNi5 film is a polycrystalline film with low surface density, large specific surface area and uniform crystalline grains; the polycrystalline film is suitable to be used as a gas sensor. In addition, the LaNi5 film has strong hydrogen absorption capacity and contributes to improving the response capability of the hydrogen sensitive sensor; and therefore, the LaNi5 film prepared by the method has better application prospect in the aspect of the hydrogen sensitive sensor.

Description

Technical field: [0001] The invention relates to a preparation method in the technical field of engineering materials, in particular to a LaNi 5 The preparation method of thin film and its application in the field of hydrogen sensor. Background technique: [0002] In a modern society where energy is increasingly scarce and environmental protection awareness is gradually enhanced, hydrogen has attracted widespread attention due to its high combustion efficiency and non-polluting products. Hydrogen is easy to leak during the process of production, storage, transportation and use, its ignition point is very low, and it is easy to burn, so the monitoring of hydrogen is particularly important. At present, hydrogen sensors mainly include semiconductor type, pyroelectric type and optical fiber type. Semiconductor-type hydrogen sensors generally use metal oxides as sensitive materials, which are simple in structure, easy to integrate, and easy to realize miniaturization of devices...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/02C23C14/16C23C14/06
Inventor 陈侃松刘华容顾豪爽刘俊峰谢鲲
Owner HUBEI UNIV
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