Mesoporous antireflective film and transparent conducting film composite coated glass and coating method thereof

Abstract

The invention relates to mesoporous antireflective film and transparent conducting film composite coated glass and a coating method thereof, and belongs to the technical field of building materials. In the prior art, a transparent conducting film and a porous silicon oxide film are coated on a glass substrate sequentially; the transparent conducting film is an undoped titanium oxide, zinc oxide and zirconium oxide film, the surface resistance of the film layer is high, and the effect of blocking infrared radiation is not better than that of a wide bandgap semiconductor-doped film; and the porous silicon oxide film is formed by randomly accumulating tiny particles and volatilizing a volatile filling agent filled in the particles, and the porosity is much lower than that of a mesoporous film. In the coated glass, a mesoporous silica (SiO2) film is coated on the wide bandgap semiconductor-doped film. The coating method is characterized by comprising the following steps of: after coating two layers of films, performing primary thermal treatment on the coated glass at the temperature of between 60 and 200 DEG C for 1 to 100 minutes; and performing secondary thermal treatment at the temperature of between 400 and 650 DEG C for 1 to 5 hours.

Description

technical field [0001] The invention relates to a mesoporous antireflection film and a transparent conductive film composite coated glass and a coating method thereof. The produced coated glass has good performance of transmitting visible light and reflecting infrared light, is suitable for use as architectural glass, and has good light transmission and insulation properties. The thermal effect belongs to the technical field of building materials. Background technique [0002] Low-E glass has a high visible light transmittance such as 80%, and a low infrared light transmittance such as? %, as architectural coated glass, it can achieve the effect of energy saving and environmental protection. Prior art related to this technical topic includes: [0003] 1. Doped wide bandgap semiconductor film. The wide bandgap semiconductor film is an oxide film of one of zinc, tin, indium, titanium, zirconium, etc., and the dopant is one of Al, Ag, Ga, B, In, F, Sn, Zr, Ce, Sc, etc. The ...

AI Technical Summary

Problems solved by technology

However, the transparent conductive film in this solution is an undoped titanium oxide, zinc oxide, and zirconium oxide thin film. The surface resistance of the film layer is high, and the effect of blocking infrared radiation is far inferior to that of a doped wide-bandgap semiconductor film.

Images