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Band-edge surface-emitting laser for FP (Fabry-Perot) cavity enhanced electrolysis photonic crystal

A technology for emitting lasers and photonic crystals, which is applied in the field of Fabry-Period cavity-enhanced electric injection photonic crystal band-edge surface-emitting lasers, which can solve the problems of reducing production costs and other issues

Active Publication Date: 2012-05-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0009] In view of this, the main purpose of the present invention is to provide a kind of FP cavity-enhanced electric injection photonic crystal band-edge surface emitting laser, to solve the problem of electric injection room temperature continuous lasing of the laser in the case of small photonic crystal area, reduce the cost of production

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  • Band-edge surface-emitting laser for FP (Fabry-Perot) cavity enhanced electrolysis photonic crystal
  • Band-edge surface-emitting laser for FP (Fabry-Perot) cavity enhanced electrolysis photonic crystal
  • Band-edge surface-emitting laser for FP (Fabry-Perot) cavity enhanced electrolysis photonic crystal

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[0039] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0040] image 3It is a partial cross-sectional schematic diagram of the three-dimensional structure of the FP cavity-enhanced electrical injection photonic crystal band-edge surface-emitting laser according to the first embodiment of the present invention. The FP cavity-enhanced electrical injection photonic crystal band edge surface emitting laser includes a deep etched hole 1, a photonic crystal region 2, a ridge strip 3, two parallel natural cleavage mirrors 4, a P electrode 5, an active wafer structure and N electrode 11.

[0041] Wherein, the active wafer structure includes a highly doped layer 6 , an upper waveguide layer 7 , an active layer 8 , a lower waveguide layer 9 and a substrate layer 10 from top to bottom....

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Abstract

The invention discloses a band-edge surface-emitting laser for an FP (Fabry-Perot) cavity enhanced electrolysis photonic crystal. The laser has a photonic crystal structure with a deep etch hole, wherein the photonic crystal structure has the band-edge surface-emitting property and is positioned on an FP ridge-shaped strip; the width of the FP ridge-shaped strip is large; the length of an FP cavity is large; an electrode P is completely positioned on the ridge-shaped strip; and the structure of the FP cavity can be expanded according to the symmetrical characteristic of the photonic crystal. By adopting the invention, a low-cost band-edge surface-emitting laser for the electrolysis photonic crystal can be realized; moreover, the structure can be applied to a reader for integrating characteristic signals in a light path; and by extending the structure of the FP cavity, multi-channel coupling enhancement can be realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a Fabry-Perot (FP) cavity enhanced electric injection photonic crystal band edge surface emitting laser. Background technique [0002] The emergence of the concept of photonic crystals has been more than 20 years ago. During this period, the theory and devices of photonic crystals have been developed by leaps and bounds. At present, various known characteristics of photonic crystals have been discovered for photons with different functions. in crystal devices. A class of photonic crystal band-edge surface-emitting lasers has attracted people's attention because of its broad application prospects in scientific research, medical equipment, optical communications, and optical storage. [0003] Such as figure 1 as shown, figure 1 It is a structural schematic diagram of a photonic crystal band-edge surface-emitting laser in the prior art. The photonic ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/18H01S5/22H01S5/042
Inventor 郑婉华周文君陈微刘安金王海玲
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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