Preparation technology for silicon nano-aperture array photovoltaic material and photovoltaic cell
A technology of photovoltaic cells and photovoltaic materials, which is applied in the fields of circuits, electrical components, and final product manufacturing, and can solve the problems of unstable battery structure and low photoelectric conversion efficiency.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
specific Embodiment approach 1
[0021] Using deep ultraviolet lithography technology and high vacuum metal deposition technology to obtain a large area of the same size and periodically distributed silver nanoparticle arrays on the surface of a clean silicon wafer; then immediately immerse the silicon wafer in a HF+H 2 o 2 +H 2 In an airtight container of O etching solution, treat at 25 degrees Celsius for 20 minutes to obtain a silicon nanohole array. The samples were then soaked in concentrated nitric acid solution for at least one hour to remove the silver film on the surface.
specific Embodiment approach 2
[0022] Using deep ultraviolet lithography technology and high-vacuum metal deposition technology to obtain a large area of the same size and periodically distributed gold nanoparticle arrays on the surface of a clean silicon wafer; then immediately immerse the silicon wafer in a HF+H 2 o 2 +H 2 In an airtight container of O etching solution, treat at 25 degrees Celsius for 20 minutes to obtain a silicon nanohole array. The samples were then soaked in aqua regia solution for at least one hour to remove the gold film on the surface.
specific Embodiment approach 3
[0023] Deposit a uniformly distributed silver film on the surface of a clean silicon wafer using high-vacuum metal deposition technology, and then thermally anneal at 200 degrees Celsius under a nitrogen protective atmosphere to form a large-area array of silver nanoparticles with the same size and periodic distribution on the silicon surface; then immediately Immerse the silicon wafer in HF+H 2 o 2 +H 2 In an airtight container of O etching solution, treat at 25 degrees Celsius for 30 minutes to obtain a silicon nanohole array. The samples were then soaked in concentrated nitric acid solution for at least one hour to remove the silver film on the surface.
PUM

Abstract
Description
Claims
Application Information

- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com