Method for manufacturing semiconductor device and method for manufacturing SiGe HBT (Heterojunction Bipolar Transistor)

Abstract

The invention relates to a method for manufacturing a semiconductor device and a method for manufacturing an SiGe HBT (Heterojunction Bipolar Transistor), wherein the method for manufacturing the SiGe HBT comprises the steps of: offering a substrate comprising an HBT collector region; sequentially forming a gate dielectric layer, a polysilicon gate layer, an oxide layer and a barrier layer on the HBT collector region; removing partial barrier layer as well as the oxide layer, the polysilicon gate layer and the gate dielectric layer under the partial barrier layer on the HBT collector region so as to form a groove where the upper surface of the HBT collector region is exposed; forming an SiGe layer in the groove to serve as a base region; forming a polysilicon emitter region on the base region; and removing the partial barrier layer and the oxide layer under the partial barrier layer on two ends of the HBT collector region till the upper surface of partial polysilicon gate layer on the two ends of the HBT collector region is exposed and preserving the barrier layer surrounding the polysilicon emitter region and the oxide layer under the barrier layer. In the invention, the manufacturing processes of the two kinds of transistors are compatible and the cost is saved; the source / drain region of a CMOS (Complementary Metal Oxide Semiconductors) transistor is raised; and therefore, the self alignment of the base region and the emitter region of the SiGe HBT is realized.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for manufacturing a semiconductor device and a method for manufacturing a SiGe (silicon germanium) HBT (Heterojunction Bipolar Transistor, heterojunction bipolar transistor) transistor. Background technique [0002] With the continuous development of microelectronics application technology, the performance of traditional silicon transistors is close to the theoretical limit. New types of transistors are being researched and developed as the basis for future microelectronics. Silicon germanium (SiGe) heterojunction bipolar transistors are one of them. SiGe heterojunction bipolar transistors are favored by the market for their low cost and high performance potential. [0003] The SiGe process is compatible with the Si device process and the BICMOS process, so it is more flexible in production. Under the same conditions, SiGe devices have higher frequency, faster ...

AI Technical Summary

Problems solved by technology

[0007] 1) In the prior art, when preparing a semiconductor device containing a CMOS transistor and a SiGe HBT transistor, it is necessary to sequentially manufacture a CMOS transistor and a SiGe HBT transistor, thereby increasing the cost of preparing the semiconductor device;

[0008] 2) The prior art cannot achieve self-alignment of the base region and the emitter region well when preparing SiGe HBT transistors

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