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Polycrystalline silicon ingot doping method and ingot casting equipment for implementing method

A technology of polysilicon and polysilicon blocks, which is applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve economic losses, the doping weight of boron master alloy ingredients is prone to deviation, and it is difficult to evaluate the quality and performance of silicon materials, etc. problems, to achieve uniform overall performance and reduce economic losses

Inactive Publication Date: 2011-09-14
LIGHTWAY GREEN NEW ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the existence of the above miscellaneous materials, it is difficult to evaluate the overall quality and performance of the silicon material through random testing, so the calculation of the doping weight of the boron master alloy is prone to deviations, so that the polycrystalline silicon ingots appear P-type high-resistance or low-resistance silicon ingots, or even Waste products such as N-type ingots appear, causing huge economic losses

Method used

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  • Polycrystalline silicon ingot doping method and ingot casting equipment for implementing method
  • Polycrystalline silicon ingot doping method and ingot casting equipment for implementing method
  • Polycrystalline silicon ingot doping method and ingot casting equipment for implementing method

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Embodiment

[0015] An embodiment, a method for doping a solar polysilicon ingot, comprising the following steps:

[0016] 1. No less than 50% of the original silicon material and its recycled miscellaneous materials: single crystal edge leather, single crystal head and tail material, single crystal crucible bottom material, polycrystalline edge leather, polycrystalline top and bottom material, and single, One or any of the miscellaneous materials such as polycrystalline silicon wafer waste is placed in the crucible, and the crucible is loaded into the ingot casting furnace.

[0017] 2. Raise the temperature of the ingot casting furnace. When the silicon material is completely melted, extract a part of the silicon liquid from the molten silicon liquid and solidify it into a polysilicon block. The conductivity type of the silicon block is measured, and the resistivity of the silicon block is measured with a four-probe resistance tester.

[0018] 3. Calculate the weight of the boron-doped m...

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Abstract

The invention discloses a solar polycrystalline silicon ingot doping method and doping equipment thereof. The doping method comprises the following steps of: 1, putting not less than 50 percent of primary silicon and reclaimed impurities into a crucible, and putting the crucible into an ingot furnace; 2, heating the ingot furnace, extracting a part of molten polycrystalline silicon from the molten silicon when all the silicon is melted, solidifying the molten polycrystalline silicon into a polycrystalline silicon block, quickly cooling the polycrystalline silicon block to room temperature, and performing conductive type and resistance test on the polycrystalline silicon block; 3, calculating the weight of doped boron master alloy according to the conductive type and the resistance measuring data of the polycrystalline silicon block; and 4, adding the calculated boron master alloy into the molten polycrystalline silicon in the ingot furnace, and casting ingots. The doping equipment comprises the quartz crucible, the ingot furnace, a nitrogen-charging cooling secondary chamber, a molten silicon quartz extraction bar and a boron master alloy feeding ladle. By using the method for measuring and assessing the silicon, the whole quality performance accuracy is high, so the calculated weight of the doped boron master alloy is accurate and the reject rate is low. The equipment has simple structure and is convenient to use.

Description

technical field [0001] The invention belongs to a solar polysilicon ingot casting technology, and relates to a doping method of a solar polysilicon ingot and equipment for realizing the method. Background technique [0002] At present, the conductivity type of silicon wafers for preparing polycrystalline silicon solar cells is required to be P-type, and the resistivity is required to be in the range of 1-3Ω·cm. Therefore, it is necessary to dope boron master alloy ingredients to the ingot polycrystalline silicon material. The current method is that before loading, the loading staff conducts a sample test on the loaded silicon material to measure the resistivity and conductivity type, and according to the sampled resistivity and conductivity type data, determine the weight of the boron master alloy that needs to be doped. For high-quality raw silicon materials, the overall situation of the silicon materials can be reflected by sampling and measuring part of the silicon materi...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
Inventor 金浩刘晓兵
Owner LIGHTWAY GREEN NEW ENERGY
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