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Method for reducing sheet resistance of graphene thin film

A graphene thin film, low-cost technology, applied in the direction of carbon-silicon compound conductors, electrical components, circuits, etc., can solve problems in the field of display technology that is difficult to use, and achieve the effect of reducing square resistance

Inactive Publication Date: 2011-09-14
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After stacking four layers of graphene film obtained by CVD method, its square resistance is also about 300Ω, but at this time the light transmittance of the four-layer graphene film is lower than 90%, which is difficult to use in the field of display technology

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1: a kind of method that reduces the square resistance of graphene film, its concrete steps are as follows:

[0018] Step 1: Preparation of graphene film: Introduce 100Pa hydrogen gas into the chemical vapor deposition chamber with 5 cm × 5 cm metal copper foil, raise the temperature to 1000 ° C, maintain for 20 minutes, and then inject 100 Pa of methane, maintain for 20 minutes, Then the temperature is lowered to room temperature at a rate of 50° C. / min to obtain a graphene film on the metal copper foil.

[0019] Step 2: Place the graphene film on the substrate: Spin-coat the electronic etching glue on the product of step 1, 100 nanometers, and corrode it in a 30% ferric nitrate aqueous solution until the metal copper foil is completely corroded, and salvage it. Wash twice in deionized water, pick up with PET (Polyethylene Terephthalate, polyethylene terephthalate) substrate, bake at 60°C for 10 minutes, then bake at 120°C for 5 minutes, soak in acetone , r...

Embodiment 2

[0022] Embodiment 2: a kind of method that reduces the square resistance of graphene film, its concrete steps are as follows:

[0023] Step 1: Preparation of graphene film: Introduce 100Pa hydrogen gas into the chemical vapor deposition chamber with 5 cm × 5 cm metal copper foil, raise the temperature to 1000 ° C, maintain for 20 minutes, and then inject 100 Pa of methane, maintain for 20 minutes, Then the temperature is lowered to room temperature at a rate of 50° C. / min to obtain a graphene film on the metal copper foil.

[0024] Step 2: Place the graphene film on the substrate: Spin-coat the electronic etching glue on the product of step 1, 100 nanometers, and corrode it in a 30% ferric nitrate aqueous solution until the metal copper foil is completely corroded, and salvage it. Wash twice in deionized water, pick up with PET (Polyethylene Terephthalate, polyethylene terephthalate) substrate, bake at 60°C for 10 minutes, then bake at 120°C for 5 minutes, soak in acetone , r...

Embodiment 3

[0029] Embodiment 3: a kind of method that reduces the square resistance of graphene film, its concrete steps are as follows:

[0030] Step 1: Preparation of graphene film: Introduce 100Pa hydrogen gas into the chemical vapor deposition chamber with 5 cm × 5 cm metal copper foil, raise the temperature to 1000 ° C, maintain for 20 minutes, and then inject 100 Pa of methane, maintain for 20 minutes, Then the temperature is lowered to room temperature at a rate of 50° C. / min to obtain a graphene film on the metal copper foil.

[0031] Step 2: Place the graphene film on the substrate: Spin-coat the electronic etching glue on the product of step 1, 100 nanometers, and corrode it in a 30% ferric nitrate aqueous solution until the metal copper foil is completely corroded, and salvage it. Wash twice in deionized water, pick up with PET (Polyethylene Terephthalate, polyethylene terephthalate) substrate, bake at 60°C for 10 minutes, then bake at 120°C for 5 minutes, soak in acetone , r...

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Abstract

The invention relates to a method for reducing sheet resistance of a graphene thin film, comprising the following step of soaking the graphene thin film and a substrate in a solution with an electron or hole donation capability for a certain time, wherein the solution in the step is one or mixed solution with an electron donation capability of low-valence solutions of heavy metal inorganic acid, organic alcohol and organic amine; or the solution in the step is one or mixed solution with a hole donation capability of a nonmetal inorganic acid solution and an organic alkane solution. The invention has the beneficial effects that: after the graphene thin film arranged on the substrate is soaked in a solution with the electron donation capability, the solution captures holes in the graphene thin film, thus the consistency of electrons in the graphene thin film is increased, and the sheet resistance of the graphene thin film is reduced.

Description

technical field [0001] The invention belongs to the technical field of electrode materials, in particular to the technical field of graphene thin films. Background technique [0002] At present, ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide) are the most common inorganic metal oxide thin film electrodes. However, with the increasing scarcity of rare metals, their prices are increasing, and their brittleness further limits their use in optoelectronics. , Large-scale applications in the field of lighting, especially in the field of flexible electronic devices. Therefore, it is imminent to develop conductive films with low development costs, abundant raw materials, high stability, and good flexibility. [0003] Graphene, discovered in 2004 by Andre K. Geim of the University of Manchester, UK, is a new carbonaceous material that consists of a single layer of carbon atoms tightly packed into a two-dimensional honeycomb structure. Theoretical research found that graphene has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04H01B1/04H01B13/00
Inventor 陈远富王泽高李萍剑李言荣
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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