Memory and manufacturing method thereof

Abstract

A memory is provided. The memory includes a substrate, a number of parallel bit lines, a number of parallel word lines and at least a oxide-nitride-oxide (ONO) structure. The bit lines are disposed in the substrate. The word lines are disposed on the substrate. The word lines are crossed with but not perpendicular to the bit lines. The ONO structure is disposed between the word lines and the substrate.

Description

technical field [0001] The invention relates to a memory and a manufacturing method thereof, in particular to a memory in which word lines and bit lines are not vertically interlaced and a manufacturing method thereof. Background technique [0002] Please refer to FIG. 1A and FIG. 1B. FIG. 1A shows a partial top view of a conventional double-bit nitride read-only memory, and FIG. A cross-sectional view of the read memory. In FIGS. 1A-1B, a dual bit nitride read only memory (NROM) 100 includes a silicon substrate 105, a plurality of buried bit lines 110, a plurality of word lines 120, a plurality of oxide / Nitride / oxide (oxide-nitride-oxide, ONO) stack structure 130b, multiple barrier diffusion oxide (barrier diffusion oxide) layers 140, multiple memory cells (memory cell) 130a (as shown in FIG. 1A and FIG. 1B shown in the larger dotted line range), a plurality of first storage nodes (storage node) 133 and a plurality of second storage nodes 135 (shown in the smaller dotted...

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Problems solved by technology

[0004] However, since there is a lot of background radiation in the external environment where the dual-bit nitride ROM 100 is located, the electron concentration in the first storage node 133 and the second storage node 135 of the memory cell 130a is likely to decrease.

This further leads to bit errors stored in the storage unit 130a, which affects the correctness of the overall data read.

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