Preparation method of thin film transistor of flexible electronic device

Abstract

The invention provides a preparation method of a thin film transistor of a flexible electronic device. The method comprises the following steps of: (1) preparing a bendable and stretchable substrate; (2) stretching the substrate, and coating an adhesive on a surface of a stretched rubber substrate; (3) depositing a gate on the substrate; (4) depositing an organic dielectric layer unit on the device which is processed in the step (3); (5) respectively depositing a source unit layer and a drain unit layer on the organic dielectric layer unit; (6) loosening the substrate, releasing loads which are acted on the substrate, and carrying out heat treatment to eliminate an interface stress and a pressure stress of the device; and (7) depositing the organic dielectric layer unit. The invention provides the method for mechanically stretching the substrate, so the channel width of the device is reduced, manufacturing accuracy is improved effectively, and the resolution ratio of the flexible electronic device is improved.

Description

technical field [0001] The invention belongs to the technical field of flexible electronic device manufacturing, and in particular relates to a solution manufacturing method of a thin film transistor of a flexible electronic device. Background technique [0002] Electronic systems based on thin-film transistors (TFT) based on glass flat plates or flexible film bases are increasingly integrated in a large area, with a size of 1 meter or more, forming a so-called flexible electronic system. Its outstanding features are: low cost, light weight, thin shape , Good flexibility, in order to facilitate portability, these devices often need to be curled. However, conventional electronic devices are semiconductor chips formed from silicon wafers, which cannot be bent by themselves and are easily damaged during actual use. The use of large-area flexible thin films as substrates to construct organic or inorganic electronic devices is regarded as the driving force for the future develop...

AI Technical Summary

Problems solved by technology

Therefore, the existing inkjet printing technology is mostly used in the printing and manufacturing of PCB circuit boards, which cannot meet the requirements of high-resolution manufacturing of high-performance flexible electronics.

Invention patent CN 1425204A uses traditional inkjet printers to deposit materials on selected positions of the substrate. In the solution manufacturing of multiple transistors, the repulsion force of the second surface area to the selected solvent is greater than that of the first surface area, which is obtained by the user. Defined channel width, but minimum width is only 5 microns

[0006] (1) The resolution of the inkjet printing process is relatively low, usually 20-50 microns. Due to factors such as the surface tension of the solution, it is difficult to further improve the printing resolution, and it is only suitable for low-performance electronic devices;

[0007] (2) During the drying and curing process of the printing solution, the volume of the formed micro-nano structure will change, which will cause the internal stress of the structure, and even cracks, which will reduce the reliability of the structure.

[0008] (3) The inkjet-printed metal nanoparticle solution forms a conductor structure after drying and solidification, but due to the volatilization of the solvent, there are a large number of voids in the structure, which makes it difficult to achieve the conductivity of conventional bulk metals

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