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Spin valve structure with electric field-adjustable magnetoresistance and preparation process thereof

A technology of electric field adjustment and preparation process, applied in the field of magnetic storage, which can solve the problems that can only be observed at lower temperatures, low impedance value, large leakage conductance, etc.

Active Publication Date: 2011-07-20
UNIV OF SCI & TECH BEIJING
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  • Description
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  • Application Information

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Problems solved by technology

[0004] BiFeO 3 It is the only material that has been confirmed to have room temperature multiferroicity, antiferromagnetic order (Neel temperature is 380°C) and ferroelectric order (Curie temperature is 810°C) at room temperature [Wang J., Neaton J.B., Zheng H., Nagarajan V., Ogale S.B., Liu B., Viehland D., Vaithyanathan V., Schlom D.G., Waghmare U.V., Spaldin N.A., Rabe K.M, Wuttig M, and Ramesh R., Science 299, 1719 (2003)] , but the large leakage conductance and low impedance of BFO at room temperature make it only possible to observe the magnetoelectric effect at lower temperatures

Method used

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  • Spin valve structure with electric field-adjustable magnetoresistance and preparation process thereof
  • Spin valve structure with electric field-adjustable magnetoresistance and preparation process thereof
  • Spin valve structure with electric field-adjustable magnetoresistance and preparation process thereof

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Embodiment Construction

[0029] According to the above structure, the applicant has grown a new spin valve structure by using laser pulse deposition and magnetron sputtering system respectively:

[0030] Sample 1: Multiferroic material BiFeO 3 The antiferromagnetic layer is deposited on the substrate by laser pulse deposition, and then the spin valve is grown in situ by magnetron sputtering. The detailed preparation process of the above structure is: using Pt(111) / Ti / SiO 2 / Si substrate, Pt layer as the bottom electrode, the size is 10*10(mm 2); laser pulse deposition and growth of multiferroic antiferromagnetic layer, laser energy is 300mJ, frequency is 5Hz, oxygen (99.99%) pressure is 0.8~10Pa during deposition, temperature is 650~750℃, annealing oxygen pressure is 20~300Pa , the annealing time is 30 minutes; the spin valve structure is grown by magnetron sputtering, and the background vacuum degree of the sputtering chamber is 2×10 -5 Pa, the pressure of argon (99.99%) during sputtering is 0.5 P...

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Abstract

The invention discloses a spin valve structure with electric field-adjustable magnetoresistance. The spin valve structure is characterized in that: the spin valve structure with a multi-ferroic anti-ferromagnetic layer\a pinning layer\a non-magnetic layer / a free layer is prepared by replacing the anti-ferromagnetic layer in a conventional spin valve with a multi-ferroic material; and the magnetoresistance of the overall spin valve is adjusted and controlled by the anti-ferromagnetic layer. The invention also discloses a preparation process for the structure. The spin valve structure has the advantages that: the adjustment mode of the conventional spin valve is that the adjustment and the control of two states of the magnetoresistance are realized by changing a magnetic field direction of the free layer through an external magnetic field; and the spin valve utilizes a magnetoelectric effect of the multi-ferroic material and realizes the adjustment and the control of the two states of the magnetoresistance, namely an electric field readable and writable magnetic spin valve, by applying an external voltage to change an electric field direction so as to change the magnetic field direction thereof to influence the magnetic field direction of the pinning layer.

Description

technical field [0001] The invention belongs to the technical field of magnetic storage and provides a spin valve structure that can be regulated by an electric field. This kind of spin valve structure with multiferroic material as the antiferromagnetic layer can change the direction of the electric domain of the antiferromagnetic layer by applying an external electric field, and due to the magnetoelectric coupling effect of the multiferroic material, the direction of the magnetic domain can also be changed. will change, thereby causing changes in the magnetic domain of the pinning layer to change the magnetoresistance state of the entire spin valve. The mutual triggering and control of this magnetoelectric signal not only contributes to the multifunctionalization of sensors and magnetic storage devices, but also is expected to be used as a basis for the development of new prototype devices, making ultra-high-speed electrical writing and magnetic reading possible. . technic...

Claims

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Application Information

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IPC IPC(8): G11B5/39H01F10/32H01F41/18
Inventor 姜勇苗君张欣张德林徐晓光
Owner UNIV OF SCI & TECH BEIJING
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