Trench metal oxide semiconductor field effect transistor and manufacturing method thereof

Abstract

The invention discloses a trench metal oxide semiconductor field effect transistor, which comprises an N+ substrate layer, an N- epitaxial layer, a gate oxide layer, a boron, phosphorus, silicon glass layer, a metal layer and a back metal layer, wherein an annular field oxide layer is arranged on an upper end face of the N- epitaxial layer; the N- epitaxial layer is provided with a trench; a doped polycrystalline silicon layer is filled in the trench; and the N- epitaxial layer comprises a source region layer and a P-body layer which is arranged on a lower end face of the source region layer. The trench metal oxide semiconductor field effect transistor also comprises a source electrode contact hole and a gate electrode contact hole, wherein the source electrode contact hole and the gate electrode contact hole are filled by the metal layer; and the metal layer at the source electrode contact hole is separated from the metal layer at the gate electrode contact hole through an opening. The invention also discloses a method for manufacturing the trench metal oxide semiconductor field effect transistor. Due to the structure and the manufacturing method, the manufacturing cost is saved.

Description

technical field [0001] The invention relates to a power field effect transistor, in particular to a trench metal oxide semiconductor field effect transistor and a manufacturing method thereof. Background technique [0002] Power field effect transistor is a new type of power device developed rapidly in recent years, because it has many excellent properties than bipolar power devices: such as high input impedance, low drive current, no minority carrier storage effect, fast switching speed, high operating frequency , has a negative current temperature coefficient, and has good current self-regulation ability, which can effectively prevent local current concentration and hot spots, and the current distribution is uniform, and it is easy to increase the current capacity through parallel connection. Good stability, large safe working area, no secondary breakdown, etc., have been widely used in various electronic equipment, such as high-speed switching circuits, switching power s...

AI Technical Summary

Problems solved by technology

[0003] Due to its specific structure, the traditional trench metal oxide semiconductor field effect transistor (Trench MOSFET) requires seven layers of masks in the manufacturing process, and the production cost high

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