Ti-Ni-Hf-Cu quaternary high-temperature shape memory alloy film and preparation method thereof

A technology of ti-ni-hf-cu, 1.ti-ni-hf-cu, applied in the field of thin film and its preparation, can solve the problem of low phase transition temperature and achieve the effect of cost reduction and good mechanical properties

Inactive Publication Date: 2011-06-01
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of low phase transition temperature and brittleness of existing shape memory alloy thin films, and to provide a Ti-Ni-Hf-Cu quaternary high temperature shape memory alloy thin film and its preparation method

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  • Ti-Ni-Hf-Cu quaternary high-temperature shape memory alloy film and preparation method thereof
  • Ti-Ni-Hf-Cu quaternary high-temperature shape memory alloy film and preparation method thereof
  • Ti-Ni-Hf-Cu quaternary high-temperature shape memory alloy film and preparation method thereof

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specific Embodiment approach 1

[0011] Embodiment 1: In this embodiment, the Ti-Ni-Hf-Cu quaternary high-temperature shape memory alloy thin film is composed of four elements: Ti, Ni, Hf and C, wherein the atomic number ratio of Ni is 34-49%, Hf The atomic number ratio of Cu is 10-25%, the atomic number ratio of Cu is 1-15%, and the rest is Ti, and the sum of the number of Ti atoms and the number of Hf atoms is equal to the ratio of the number of Ni atoms and the number of Cu atoms And the ratio of 1.041 ~ 1.222:1.

specific Embodiment approach 2

[0012] Specific embodiment two: the preparation method of the Ti-Ni-Hf-Cu quaternary high-temperature shape memory alloy film in this embodiment is as follows: 1. Put the substrate on the target stage of the vacuum chamber, and use Ti-Ni-Hf-Cu four Elemental alloy target as the target material,

[0013] Then sputtering under the conditions of sputtering power 100W~600W, vacuum degree 0.1Pa~0.8Pa, distance between target material and substrate is 4cm~9cm, to obtain thin film; The crystallization is completed by heat preservation for 30-60 minutes under the condition of ℃, and the Ti-Ni-Hf-Cu quaternary high-temperature shape memory alloy film is obtained; the number of atoms of Ni in the Ti-Ni-Hf-Cu quaternary alloy target described in step The number ratio is 34-49%, the atomic number ratio of Hf is 10-25%, the atomic number ratio of Cu is 1-15%, and the rest is Ti, and the sum of the number of Ti atoms and the number of Hf atoms is equal to that of Ni The ratio of the number...

specific Embodiment approach 3

[0017] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the substrate in step 1 is Si single wafer, quartz glass, copper foil or aluminum sheet. Others are the same as in the second embodiment.

[0018] The Si single wafer described in this embodiment is a p-Si (100) polished single wafer.

[0019] In the thin film preparation process, both the type of substrate and the cleanliness of the surface have an important impact on the quality of the thin film. For Si substrates, due to the particularity of the Si manufacturing process, impurities such as metal K ions and Na ions will remain on the Si surface, and impurities such as oxygen atoms will also be adsorbed. As a result, the deposited atoms nucleate first at the impurities, making the The point atoms are dense, holes may appear on the surface of the film or cause the surface of the film to be uneven, and the unclean substrate is likely to cause low adhesion between the film and the substrate, an...

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Abstract

The invention discloses a Ti-Ni-Hf-Cu quaternary high-temperature shape memory alloy film and a preparation method thereof and relates to a film and a preparation method thereof, solving the problems of low phase change temperature and crispness of the traditional shape memory alloy film. The preparation method comprises the following steps of: (1) putting a substrate on a target table in a vacuum chamber, and then sputtering to obtain a film, wherein a Ti-Ni-Hf-Cu quaternary alloy target is used as a target; and (2) preserving the heat of the film obtained in the step (1) at 450-750 DEG C for 30-60 minutes to finish crystallization so as to obtain the Ti-Ni-Hf-Cu quaternary high-temperature shape memory alloy film. In the invention, the phase change temperature of the Ti-Ni-Hf-Cu quaternary alloy film can reach higher than 100 DEG C, thus the alloy film can be applied at higher temperature and has good mechanical property, and the cost of the alloy film is slightly reduced compared with a ternary Ti-Ni-Hf alloy film.

Description

technical field [0001] The invention relates to a thin film and a preparation method thereof. Background technique [0002] At present, shape memory alloy film, as a new type of actuator material, has the advantages of large output force and displacement, electrical control, and easy processing, and has received widespread attention in the fields of micromechanics and micromotors. However, the commonly used Ti-Ni and Ti-Ni-Cu memory alloy thin films have a phase transition temperature of about 50°C and cannot be used in high temperature applications. Ternary high-temperature memory alloy films such as Ti-Ni-Hf and Ti-Ni-Zr are brittle and difficult to process; although alloy films such as Ti-Ni-Pd and Ti-Ni-Pt have slightly better performance, they are expensive. Therefore, the application of high-temperature memory alloy thin films is limited to a certain extent. Improving the processing performance of high-temperature memory alloy thin films, maintaining their high phase...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/16C23C14/18C23C14/35
Inventor 孟祥龙傅宇东吴冶蔡伟
Owner HARBIN INST OF TECH
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