Method for generating high repetition frequency ultrashort laser pulse

A high repetition rate, ultra-short laser technology, applied in the direction of lasers, laser components, phonon exciters, etc., can solve the problem of increasing the heat load of the pulse picker drive power supply, which is not conducive to increasing the laser repetition rate and increasing the cost of the laser system and other problems, to achieve the effects of suppressing spontaneous emission light amplification, prolonging life, and improving stability

Active Publication Date: 2011-05-25
北京赢圣科技有限公司
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  • Application Information

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Problems solved by technology

This increases the thermal load of the pulse picker drive power supply, which is not conducive to increasing the repetition rat...

Method used

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  • Method for generating high repetition frequency ultrashort laser pulse
  • Method for generating high repetition frequency ultrashort laser pulse
  • Method for generating high repetition frequency ultrashort laser pulse

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specific Embodiment 1

[0043] The cavity-empty SESAM mode-locked laser 8 adopts a semiconductor laser 9 (continuously) as the pumping source of the laser crystal 11, and the semiconductor laser is focused into the laser crystal 11 after being shaped by a collimating mirror 10a and a focusing mirror 10b, and the collimating and focusing mirror 10a, 11b is plated with a dichroic film that is anti-reflective to the pump wavelength and fully reflects the oscillating laser to prevent the light leakage from the laser resonator from being focused by the collimating and focusing mirrors 10b and 10a to damage the pump source. The end face 11a of the laser crystal facing the pump source is coated with a dichroic film that is anti-reflective to the wavelength of the pump light and highly reflective to the wavelength of the oscillating light. Picosecond laser system, the material of laser crystal 11 is Nd:YAG, Nd:YLF, Nd:YVO4, Nd:GdVO4, etc. For femtosecond laser system, the material of laser crystal 11 is Nd:Gl...

specific Embodiment 2

[0045] The cavity-empty SESAM mode-locked laser 8 uses a semiconductor laser 9 (quasi-continuous) as the pumping source of the laser crystal 11. The semiconductor laser is focused into the laser crystal 11 after being shaped by the collimating mirror 10a and the focusing mirror 10b, and the collimating and focusing mirror 10a , 11b is plated with a dichroic film that is anti-reflective to the pump wavelength and fully reflects the oscillating laser, preventing the light leakage of the laser resonator from being focused by the collimating focusing lens 10b, 10a and damaging the pump source. The end face 11a of the laser crystal facing the pump source is coated with a dichroic film that is anti-reflective to the wavelength of the pump light and highly reflective to the wavelength of the oscillating light. Picosecond laser system, the material of laser crystal 11 is Nd:YAG, Nd:YLF, Nd:YVO4, Nd:GdVO4, etc. For femtosecond laser system, the material of laser crystal 11 is Nd:Glass, ...

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Abstract

The invention provides a method for acquiring full solid state ultrashort laser pulse with high repetition frequency (1-500kHz), high pulse stability and high single pulse energy (50muJ-1mJ) and belongs to the technical field of ultrashort laser pulse. By combining a cavity dumping SESAM (Semiconductor Saturable Absorption Mirror) locking mode with a regenerative amplifier, the stability of the high repetition frequency regenerative amplifier is improved and the generation of spontaneous amplified emission (ASE) is inhibited. The frequency of a cavity dumping mode-locking laser seed source is the same as the regenerative amplifying frequency, thus the utilizing efficiency of seed light is improved. A low-power pumping (-3W) is applied to the seed source so as to reduce the heat load of a laser crystal and the SESAM and facilitate the prolonging of the seed source. Externally-picked pulse of a mode locked laser is required to add lamda/2 voltage to an electro-optic modulation crystal and the cavity dumping mode-locking laser is only required to add lamda/4 or lower voltage to the electro-optic modulation crystal so as to reduce the heat load of an electro-optic modulation drive power source to be over three fourths and facilitate the improvement on the repetition frequency of the regenerative amplifier.

Description

technical field [0001] The invention is a method capable of generating ultra-short laser pulses with high repetition frequency, high stability and high energy. This method combines cavity-empty SESAM mode-locked laser technology and regenerative amplification technology. The method improves the utilization rate of the seed laser of the main oscillator and the stability of the regenerative amplifier, and at the same time effectively suppresses the influence of the spontaneous emission optical amplification (ASE) on the output pulse width. Background technique [0002] The repetition frequency of the SESAM-based mode-locked laser depends on the cavity length, the repetition frequency is generally between 20-200 megahertz (MHz), and the output power is hundreds of milliwatts (mW)-tens of watts (W), but due to the repetition If the frequency is too high, the energy of a single pulse of mode-locked light is only a few nanojoules (nJ) to hundreds of nanojoules (nJ). It cannot me...

Claims

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Application Information

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IPC IPC(8): H01S3/098H01S3/0941
Inventor 李港常亮陈檬
Owner 北京赢圣科技有限公司
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