Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Etching method and substrate having conductive polymer

A conductive polymer and etching technology, which is applied to the conductive layer, circuit, and electrical components on the insulating carrier, can solve the problems that it is difficult to make ink, and the conductive polymer is easy to condense, so as to achieve the effect of stable etching

Inactive Publication Date: 2011-02-23
TSURUMISODA +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conductive polymers tend to aggregate, making it difficult to make inks
In addition, there is also the problem of preventing spreading after printing or that the periphery of the droplet is thicker than the center after the ink dries.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching method and substrate having conductive polymer
  • Etching method and substrate having conductive polymer
  • Etching method and substrate having conductive polymer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0159] In the water, add a specified amount of ammonium cerium nitrate (NH 4 ) 2 Ce(NO 3 ) 6 (Hereafter also referred to as "CAN".) and concentrated nitric acid to prepare etching solution 1.

[0160] In addition, a polythiophene-based conductive polymer (Baytron PH 500 manufactured by H.C. Starck Co., Ltd.) was placed on the surface of a 2.5×5 cm square polyethylene terephthalate (PET) sheet so that the weight of the conductive polymer Film formation was performed at 100 mg, and the member thus produced was subjected to an etching test.

[0161] The conductive polymer test piece formed into a film was immersed in 100 g of this etching solution, stirred at room temperature for 27 hours, and dissolved.

[0162] Next, the CAN concentration was determined by a titration method (redox titration method) using potassium iodide. The results are shown in Table 4 and figure 2 .

[0163] As a result, it was confirmed that the CAN concentration decreased as the etching amount of ...

Embodiment 2

[0170] In the same manner as in Example 1, etchant 2 shown in Table 3 was prepared. In addition, a polythiophene-based conductive polymer (Baytron PH 500 manufactured by H.C. Starck Co., Ltd.) was similarly formed on the surface of a 2.5×5 cm square PET sheet so that the weight of the conductive polymer was 50 mg. The components thus fabricated were used for etching tests. The conductive polymer was dissolved in the same manner as in Example 1.

[0171] Next, the CAN concentration was determined by a titration method (redox titration method) using potassium iodide. The results are shown in Table 5 and image 3 .

[0172] As a result, it was confirmed that even if the concentration of CAN and the concentration of nitric acid were changed, the concentration of CAN decreased as the amount of conductive polymer added increased.

[0173] [table 5]

[0174]

Embodiment 3

[0176] The conductive polymer test piece was immersed in 100 g each of etching solutions 1 and 2, and stirred at room temperature for 27 hours to dissolve. Next, the oxidation-reduction potential (ORP) was measured, and the results are shown in Table 6.

[0177] As a result, it was confirmed that ORP decreased as the amount of conductive polymer added increased. From this, it can be seen that the etchant can be managed according to the ORP.

[0178] [Table 6]

[0179]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is an etching method wherein etching of a conductive polymer using a specific cerium (IV) compound can be controlled simply and easily, thereby performing the etching stably. A substrate having a conductive polymer etched by the etching method is also disclosed. The etching method is characterized by comprising an etching step wherein a conductive polymer is etched by using an etchant containing a specific cerium (IV) compound; an analysis step wherein the etchant is analyzed by at least one analysis means selected from the group consisting of redox potential measurement, redox titration and electrical conductivity measurement; and a control step wherein the etching process is controlled in accordance with the result obtained in the analysis step.

Description

technical field [0001] The invention relates to an etching method and a substrate with conductive polymers. Background technique [0002] At present, as a transparent conductive film, ITO (indium tin oxide) containing indium (In) is mainly used, but it is also estimated that In is a rare element with a recoverable reserve of 3,000 tons, and it will be around 2011 to 2013. Recoverable reserves are exhausted, and an alternative material to ITO that does not use In is currently being studied. The conductivity of conductive polymers has been significantly improved, and conductive polymers are expected to be used as substitute materials for ITO. [0003] This conductive polymer has the characteristics of conductivity, light transmission, luminescence, and flexibility after film formation, and its application to transparent conductive films, electrolytic capacitors, antistatic agents, batteries, and organic EL elements is being studied. , part of which has been practical. [00...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14H01L21/306C08J7/00
CPCH01L51/0017H01L21/32134C08J2300/108C08J7/12H01L51/0023H10K71/231H10K71/621
Inventor 西村康雄井原孝
Owner TSURUMISODA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com