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Method of dielectric film treatment

A technology of dielectric film and dielectric material, applied in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as metal passivation, electrical integrity impact, etc.

Inactive Publication Date: 2011-02-09
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Metal corrosion can negatively impact the electrical integrity of fabricated devices, forcing metal passivation during the process flow

Method used

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Embodiment Construction

[0021] Some embodiments for better and more efficient cleaning of substrate surfaces will now be described. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.

[0022] Traditional methods have focused primarily on providing solutions that remove specific types of contaminants from the substrate surface. It is well known in the industry that there is more than one type of contamination that can potentially cause damage to the substrate surface. figure 1A simplified schematic diagram of a damaged portion 100-5 of a substrate 100 with various contaminants is depicted. As shown, portion 100 - 5 of substrate 100 includes a low-k dielectric film layer 110 formed on substrate 100 . The low-k dielectric film layer 110 is formed using any one of...

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PUM

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Abstract

A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of applicationchemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

Description

technical field [0001] The present invention relates generally to semiconductor substrate processing, and more particularly to methods of cleaning substrate surfaces after etching operations. Background technique [0002] Semiconductor devices are obtained through various manufacturing operations. These fabrication operations define features on a semiconductor wafer (wafer or substrate) that span multiple layers. At a basic level, a plurality of transistor devices with diffusion regions are defined. At subsequent levels, interconnections using metal wiring are defined and electrically connected to underlying transistor devices to form semiconductor devices such as integrated circuits (ICs), memory cells, and the like. A low-k dielectric material is used to separate and isolate these features and other layers to obtain a fully functioning semiconductor device. To provide better isolation between features and further reduce coupling capacitance and power consumption, the lo...

Claims

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Application Information

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IPC IPC(8): H01L21/302H01L21/31
CPCH01L21/31138H01L21/31058H01L21/3105H01L21/67051H01L21/02063
Inventor 尹秀敏朱吉约翰·M·德拉里奥斯马克·威尔考克森
Owner LAM RES CORP
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