Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of monocrystalline silicon corrodent and method for corroding convex silicon

A single-crystal silicon and etchant technology, applied in chemical instruments and methods, crystal growth, post-processing, etc., can solve the problems of inability to compensate for silicon convex corners, ecological pollution, etc., and achieve the effect of smooth silicon surface and stable corrosion rate

Inactive Publication Date: 2011-02-09
PEKING UNIV
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a method for preparing a monocrystalline silicon etchant and a method for corroding silicon with convex corners. Based on this method, defects such as inability to compensate silicon convex corners and serious ecological pollution in the prior art can be overcome.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of monocrystalline silicon corrodent and method for corroding convex silicon
  • Preparation method of monocrystalline silicon corrodent and method for corroding convex silicon
  • Preparation method of monocrystalline silicon corrodent and method for corroding convex silicon

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0020] refer to figure 1 , figure 1 It is a flow chart of the steps of a preparation method embodiment of a single crystal silicon etchant of the present invention, comprising the following steps:

[0021] Diluting step S110, diluting the tetramethylammonium hydroxide stock solution to form a tetramethylammonium hydroxide solution; adding step S120, adding fatty alcohol polyoxyethylene ether to the tetramethylammonium hydroxide solution; dissolving step S130, stirring The fatty alcohol polyoxyethylene ether is completely dissolved in the tetramethylammonium hydroxide solution to form the monocrystalline silicon etchant.

[0022] The embodiment of the present invention is characterized by adding fatty alcohol ethoxylate, an alcohol-based nonionic surfactant that is less harmful to the human body and the environment, into the TMAH solution. The TMAH solution after adding this surfactant has the following improvements to the corrosion characteristics of crystalline silicon:

...

Embodiment 1

[0029] Step 1, diluting the TMAH stock solution to form a TMAH solution. Wherein, the quality of the tetramethylammonium hydroxide solution is 25% of the quality of the monocrystalline silicon etchant

[0030] Step 2, adding fatty alcohol polyoxyethylene ether to the prepared TMAH solution in step 1; wherein, the quality of fatty alcohol polyoxyethylene ether is 0.1% of the mass of single crystal silicon etchant

[0031] Step 3, stirring until the fatty alcohol polyoxyethylene ether is completely dissolved in the tetramethylammonium hydroxide solution to form the single crystal silicon etchant.

[0032] On the other hand, the present invention also provides a method for etching convex silicon with a single crystal silicon etchant: during silicon etching, the temperature of the single crystal silicon etchant is controlled within the range of 50°C to 85°C. Experiments have proved that the prepared monocrystalline silicon etchant has a good etching effect at 50°C, 85°C and sever...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a monocrystalline silicon corrodent and a method for corroding convex silicon. The preparation method of the monocrystalline silicon corrodent comprises the steps of: diluting a tetramethylammonium hydroxide stock solution to form a tetramethylammonium solution; adding fatty alcohol-polyoxyethylene ether into the tetramethylammonium solution; and stirring the fatty alcohol-polyoxyethylene ether until fully dissolving into the tetramethylammonium solution to form the monocrystalline silicon corrodent. In the invention, the fatty alcohol-polyoxyethylene ether having little damage to the environment and a human body is adopted as an additive of a silicon corrosion solution of the tetramethylammonium solution, and thus the function of inhibiting corrosion rate of other rapid corrosion crystal faces of crystal removing faces in the crystalline silicon is realized. Meanwhile, when the tetramethylammonium solution is used for corroding the silicon, a convex structure needs not to be compensated; and the corrosion rate is stable, and the silicon surface obtained through the corrosion is smooth and is compatible with a CMOS (Complementary Metal-Oxide-Semiconductor) process.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a method for preparing a monocrystalline silicon etchant and a method for corroding convex silicon. Background technique [0002] The anisotropic etching technology of silicon is an important three-dimensional processing technology of single crystal silicon, which has the advantages of low cost, simple equipment and easy operation, and is widely used in the processing of silicon micromachines, such as: anisotropic self-stop etching technology It is used in the manufacture of thin film and beam structures of single crystal silicon. These structures are often used in silicon-based pressure sensors and silicon-based accelerometers. Anisotropic silicon wafer punch-through etching technology on single crystal silicon materials can produce A quality block with the thickness of the entire silicon wafer is often used to make a high-sensitivity acceleration sensor; anis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/32C30B33/10
Inventor 胡启方高成臣郝一龙
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com