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Composition for forming resist underlayer film and method for forming resist pattern using the same

A technology of resist underlayer and composition, which is applied in the field of composition and can solve problems such as no record

Active Publication Date: 2013-01-23
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is neither description nor suggestion about a polymer in which a derivative of an alicyclic or aliphatic tetracarboxylic dianhydride having high transparency to a wavelength of 193 nm is introduced into the main chain.

Method used

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  • Composition for forming resist underlayer film and method for forming resist pattern using the same
  • Composition for forming resist underlayer film and method for forming resist pattern using the same
  • Composition for forming resist underlayer film and method for forming resist pattern using the same

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0107] 9.00 g of monoallyl diglycidyl isocyanuric acid (manufactured by Shikoku Chemical Industry Co., Ltd.) represented by the above formula (9-a), 1,2,3 6.46 g of 4-cyclobutanetetracarboxylic dianhydride and 0.61 g of ethyl triphenylphosphonium bromide were dissolved in 64.29 g of propylene glycol monomethyl ether and reacted at 130°C for 4 hours to obtain a polymer-containing solution . The obtained polymkeric substance is equivalent to containing the polymkeric substance (a: b=1: 1 (molar ratio)) of structural unit shown in above-mentioned formula (13), carries out GPC analysis, the weight average molecular weight of calibration with standard polystyrene as a result is 7,400. 1,2,3,4-Cyclobutanetetracarboxylic dianhydride is obtained, for example, using the method described in JP-A-2-61956 and JP-A-2003-192685.

Synthetic example 2

[0109] 20.00 g of monoallyl diglycidyl isocyanuric acid (manufactured by Shikoku Chemical Industry Co., Ltd.), 7.06 g of 1,2,3,4-cyclobutanetetracarboxylic dianhydride, 2,4-dihydroxy 5.55 g of benzoic acid and 1.34 g of ethyltriphenylphosphonium bromide were dissolved in 79.19 g of propylene glycol monomethyl ether, and reacted at 130° C. for 4 hours to obtain a solution containing a polymer. The obtained polymkeric substance is equivalent to the polymkeric substance (a: b': b "'=2:1:1 (molar ratio)) that contains the structural unit shown in above-mentioned formula (14), carries out GPC analysis, the result is analyzed by standard polymer The styrene-calibrated weight average molecular weight was 8,200.

Synthetic example 3

[0111] Monoallyl diglycidyl isocyanuric acid (manufactured by Shikoku Chemical Industry Co., Ltd.) 8.00 g, 1,2,3,4-cyclopentanetetracarboxylic acid dicarboxylic acid represented by the above formula (7-d) After dissolving 6.04 g of anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) and 0.53 g of ethyltriphenylphosphonium bromide in 34.01 g of propylene glycol monomethyl ether, they were reacted at 130° C. for 4 hours to obtain a polymer-containing solution. The obtained polymkeric substance is equivalent to the polymkeric substance (a:b=1:1 (molar ratio)) that contains the structural unit shown in above-mentioned formula (15), carries out GPC analysis, the weight average molecular weight of result calibration with standard polystyrene for 10,000.

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Abstract

It is an object to provide a resist underlayer film forming composition having a large selection ratio of a dry etching rate, and having a k value and an n value at a short wavelength such as an ArF excimer laser, both of which exhibit desired values. There is provided a resist underlayer film forming composition containing a polymer obtained by reacting at least a tetracarboxylic dianhydride having an alicyclic structure or an aliphatic structure and a diepoxy compound having two epoxy groups with an organic solvent containing an alcohol-based compound having an OH group, and a solvent.

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer between a substrate and a resist film formed thereon in order to obtain a resist pattern of a desired shape in a photolithography process in the manufacturing process of a semiconductor device Useful compositions for films. In addition, it relates to a composition for forming a resist underlayer film applied in a photolithography process using a liquid immersion exposure apparatus. In addition, the resist underlayer film which can suppress the influence of reflected waves on the resist film when exposing the resist film is also referred to as an antireflection film. Lower membrane. Background technique [0002] A composition for forming an antireflection film used in a photolithography process using ArF excimer laser light with a wavelength of about 193 nm as a light source is known (see Patent Document 1). Patent Document 1 discloses a composition containing an acrylic r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/11C08G59/42
CPCC08G63/20C08G63/668C08G59/1455C08G63/6854C08G63/42G03F7/091G03F7/11H01L21/0273H01L21/0274
Inventor 坂本力丸远藤贵文
Owner NISSAN CHEM IND LTD
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