Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film transistor, production method thereof and pixel structure

A thin-film transistor and pixel structure technology, which is applied in transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as excessive component resistance, component interference, disconnection, etc.

Active Publication Date: 2012-07-25
AU OPTRONICS CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

thus resulting in figure 1 The problem with the different line widths of the drain D shown
[0004] Generally speaking, if the CD value of the photoresist pattern is too large, it is easy to cause the problem of cross-talk in the formed device.
If the CD value of the photoresist pattern is too small, it is easy to cause problems such as excessive resistance, disconnection or short circuit of the formed components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor, production method thereof and pixel structure
  • Thin film transistor, production method thereof and pixel structure
  • Thin film transistor, production method thereof and pixel structure

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0063] Figure 2A to Figure 2C is a schematic cross-sectional view of a manufacturing process of a thin film transistor according to an embodiment of the present invention. Please refer to Figure 2A , The manufacturing method of the thin film transistor of the present embodiment firstly includes providing a substrate 100 on which a gate G, an insulating layer 102 and a channel layer CH have been formed. According to a preferred embodiment, an ohmic contact layer OM is further formed on the channel layer CH.

[0064] The material of the substrate 100 can be glass, quartz, organic polymer, or opaque / reflective material (eg, conductive material, wafer, ceramic, or other applicable materials), or other applicable materials.

[0065] The gate G is formed on the substrate 100 . A method for forming the gate G is, for example, depositing a layer of conductive material on the substrate 100 first, and then patterning the conductive material to form the gate G through lithography an...

no. 2 example

[0077] Figure 4 is a schematic top view of a pixel structure according to an embodiment of the present invention. Figure 5 yes Figure 4 The enlarged schematic diagram at 300 of . Please refer to Figure 4 as well as Figure 5 The pixel structure of this embodiment includes a data line DL, a first scan line SL1, a second scan line SL2, a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, a main pixel electrode PE1 and a sub pixel electrode PE2.

[0078] The first scanning line SL1 and the second scanning line SL2 are arranged in parallel, the first and second scanning lines SL1, SL2 and the data line DL are arranged alternately, and there is an insulating layer between the first and second SL1, SL2 and the data line DL. layer. In other words, the extending direction of the data line DL is not parallel to the extending direction of the first and second scanning lines SL1 and SL2. Preferably, the extending direction of the d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a thin film transistor, a production method thereof and a pixel structure. The production method comprises the steps of providing a base plate, wherein a grid electrode, an insulating layer and a channel layer are formed on the base plate, and a conducting layer is formed on the base plate to cover the channel layer and the insulating layer; forming a photoresist layer onthe conducting layer; arranging a photo mask above the photoresist layer, wherein the photoresist layer comprises a data line pattern, a source electrode pattern and a drain electrode pattern, a first width (W1) is reserved between the source electrode pattern and the drain electrode pattern, the data line pattern has a second width (W2), the first width (W1) and the second width (W2) meet the conditional that if W1-1(um), then W2+a(um), and a is larger than 0.3 and less than 0.7; carrying out an exposure program and a development program to pattern the photoresist layer by utilizing the photo mask; and patterning the conducting layer to form a source electrode, a drain electrode and a data line by utilizing the photoresist layer as an etching mask.

Description

technical field [0001] The invention relates to a thin film transistor, a manufacturing method of the thin film transistor and a pixel structure. Background technique [0002] With the advancement of display technology, people can make their lives more convenient with the assistance of displays. In order to achieve the characteristics of lightness and thinness of displays, flat panel displays (FPDs) have become the current mainstream. Among many flat panel displays, a liquid crystal display (LCD) has superior characteristics such as high space utilization efficiency, low power consumption, no radiation, and low electromagnetic interference. Therefore, the liquid crystal display is very popular among consumers. The structure design of thin film transistors, which are widely used in displays, will directly affect the performance of products. Generally speaking, a thin film transistor has at least a gate, a source, a drain, and a channel layer, among which the conductivity of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/786H01L29/06H01L27/02
Inventor 吴皇君曾贤楷
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com