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Method for preparing ZnO nanorod/microrod crystals with accurate controllable growth position on substrate

A microrod and substrate technology, applied in ion implantation plating, coating, metal material coating process, etc., can solve the problems of unsuitable electron beam lithography, high cost, etc.

Inactive Publication Date: 2010-12-15
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to obtain such a small-sized template, it is necessary to use high-resolution etching technology, such as electron beam lithography, which is expensive and not suitable for large-scale preparation.

Method used

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  • Method for preparing ZnO nanorod/microrod crystals with accurate controllable growth position on substrate
  • Method for preparing ZnO nanorod/microrod crystals with accurate controllable growth position on substrate
  • Method for preparing ZnO nanorod/microrod crystals with accurate controllable growth position on substrate

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0021] Step 1, the polycrystalline Si substrate is ultrasonically cleaned for 15 minutes with toluene, acetone, ethanol and deionized water in sequence, after cleaning, it is blown dry with nitrogen and quickly put into the vacuum chamber of the magnetron sputtering equipment. The vacuum degree of the vacuum chamber before sputtering starts is 3×10 -3 Pa, a metal Zn target with a purity of 99.99% is used for sputtering.

[0022] Step two, when starting the magnetron sputtering, the vacuum chamber is fed with Ar and O with a purity of 99.5%. 2 The mixed gas, the sputtering power is 100W, Ar and O 2 The flow ratio is 10sccm: 10sccm. During the sample preparation process, the substrate temperature was 340° C., and after sputtering for 1 hour, an 80 nm-thick ZnO thin film seed layer was deposited on the substrate.

[0023] Step 3, annealing the grown ZnO thin film at 500° C. for 2 hours in air.

[0024] Step 4, on the ZnO film seed layer treated in Step 3, use a coater to spin...

Embodiment approach 2

[0032] In step 1, the single crystal Si substrate is ultrasonically cleaned for 15 minutes with toluene, acetone, ethanol and deionized water in sequence. After cleaning, it is blown dry with nitrogen and quickly put into the vacuum chamber of the magnetron sputtering equipment. The vacuum degree of the vacuum chamber before sputtering starts is 3×10 -3 Pa, a metal Zn target with a purity of 99.99% is used for sputtering.

[0033] Step two, when starting the magnetron sputtering, the vacuum chamber is fed with Ar and O with a purity of 99%. 2 The mixed gas, the sputtering power is 200W, Ar and O 2 The flow ratio is 15 sccm: 15 sccm. During the sample preparation process, the substrate temperature was 300° C., and after sputtering for 1 hour, a 120 nm-thick ZnO thin film seed layer was deposited on the substrate.

[0034] Step 3, annealing the grown ZnO thin film at 400° C. for 2 hours in air.

[0035] Step 4, on the ZnO thin film seed layer treated in Step 3, use a coater ...

Embodiment approach 3

[0043] Step 1: Use toluene, acetone, ethanol, and deionized water to ultrasonically clean the amorphous substrates such as glass, ceramics, copper plates, or aluminum plates for 15 minutes in sequence. After cleaning, dry them with nitrogen and quickly put them into the magnetron sputtering equipment. in a vacuum chamber. The vacuum degree of the vacuum chamber before sputtering starts is 3×10 -3 Pa, a metal Zn target with a purity of 99.99% is used for sputtering.

[0044] Step two, when starting the magnetron sputtering, the vacuum chamber is fed with Ar and O with a purity of 99.1%. 2 The mixed gas, the sputtering power is 300W, Ar and O 2 The flow ratio is 20sccm:20sccm. During the sample preparation process, the substrate temperature was 25° C., and after sputtering for 1 h, a 200 nm-thick ZnO thin film seed layer was deposited on the substrate.

[0045] Step 3, annealing the grown ZnO thin film at 400° C. for 2 hours in air.

[0046] Step 4, on the ZnO thin film see...

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Abstract

The invention provides a method for preparing ZnO nanorod / microrod crystals with an accurate growth position on a substrate. Due to the unique structure and performance, a ZnO crystalline material with a micro-nanostructure shows special application potential and is applied in the fields of electronic devices, photo-electronic devices, chemical sensors, biological power generation, ultraviolet detection and the like in recent years. The method comprises the following steps of: pre-modifying a ZnO seed crystal layer on the substrate; preparing a photo-resist layer which has a shape size of less than 2 mu m and serves as a template layer on the substrate; synthesizing the ZnO micro-nanorod crystals by using precursor solution containing sodium citrate and ethanolamine serving as two growth modifiers; and successfully preparing the ZnO nanorod / microrod crystals with the accurate controllable growth position on monocrystaline, polycrystalline or amorphous substrate on which the seed crystal layer is pre-modified. The method realizes position control of the ZnO micro-nano-crystalline material on the substrate and is a necessary step for realizing industrial application of devices of the ZnO micro-nano-crystalline material.

Description

technical field [0001] The invention relates to an optoelectronic material and a preparation method thereof. It is suitable for the fields of electronic devices, optoelectronic devices, chemical sensing, bio-power generation, and ultraviolet detection. Background technique [0002] ZnO is an important II-VI direct bandgap wide bandgap semiconductor material. Zinc oxide materials with various micro-nano structures such as nanowires, nanotubes, nanorods, nanosheets, nanoarrays, nanoflowers, etc., have significantly different structures and properties from bulk materials, thus showing special application potential, especially In recent years, it has achieved important applications in fields such as field effect transistors, Schottky diodes, ultraviolet light detectors, gas sensors, and nanogenerators. Realizing the periodic distribution of ZnO micro-nano rod crystals, and even realizing the precise control of the growth position, is of great significance to the industrial app...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50C04B41/85C03C17/245C23C14/34
Inventor 王永生何大伟陶颖镭赵爱伦富鸣
Owner BEIJING JIAOTONG UNIV
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