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Method for cleaning back surface of tungsten plug CMP for integrated circuit in ultra-large scale

A large-scale integrated circuit and rear surface technology, applied in the field of polishing liquid, can solve the problems of difficult cleaning of polishing liquid, metal ion pollution, etc., and achieve the effect of improving perfection, reducing damaged layer, and improving uniformity

Inactive Publication Date: 2010-12-08
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the problems of metal ion pollution on the surface of the multilayer wiring tungsten plug CMP of a very large-scale integrated circuit and the difficulty of cleaning the polishing solution, and discloses a simple, easy and pollution-free very large-scale integrated circuit tungsten plug CMP Rear Surface Cleaning Method

Method used

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  • Method for cleaning back surface of tungsten plug CMP for integrated circuit in ultra-large scale
  • Method for cleaning back surface of tungsten plug CMP for integrated circuit in ultra-large scale
  • Method for cleaning back surface of tungsten plug CMP for integrated circuit in ultra-large scale

Examples

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Effect test

Embodiment 1

[0026] Example 1: Preparation of 4000g tungsten plug water-soluble polishing liquid

[0027] Take 3645g of deionized water, add 100g of FA / O surfactant and 50g of FA / O chelating agent while stirring, then weigh 5g of hexamethylenetetramine, dilute with 200g of deionized water, and pour into the above liquid while stirring. After uniformly stirring, 4000g tungsten plug water polishing solution was obtained. After water polishing was performed at a flow rate of 1000g / min, the surface was smooth and free of corrosion, and the roughness was 7.8nm.

Embodiment 2

[0028] Example 2: Preparation of 4000g tungsten plug water-soluble polishing liquid

[0029] Take 3400g of deionized water, add 100g of Oπ-7 surfactant and 50g of FA / O chelating agent while stirring, and then weigh 250g of phenylproprazole, dilute with 200g of deionized water, and pour into the above liquid while stirring. After stirring uniformly, 4000g of water-soluble polishing liquid for tungsten plug is obtained. After water polishing is carried out at a flow rate of 4000g / min, the surface is smooth and free of corrosion, and the roughness is 6.4nm.

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Abstract

The invention relates to a method for cleaning the back surface of a tungsten plug CMP in the high-precision machining process of the surface of the tungsten plug for an integrated circuit in an ultra-large scale. A water polishing solution of an alkaline medium is utilized, and the water polishing solution comprises an activator, a chelator and a corrosion inhibitor. After an alkaline polishing process is just finished, the water polishing solution is added immediately, and a large-flow water polishing method is adopted, so that the residual polishing solution can be washed away, substances which can be cleaned easily are absorbed, the surface tension is quickly lowered, the reaction is prevented from continuing (physical adsorption state), a monomolecular passivating film is formed, and metal ions can form soluble chelates, thereby obtaining a clean and perfect polished surface. Moreover, the water polishing solution has the advantages of low cost, no pollution on the environment and no corrosion on the equipment.

Description

Technical field [0001] The invention belongs to a method of using polishing liquid, and particularly relates to a method for cleaning the surface of a very large scale integrated circuit tungsten plug after CMP. Background technique [0002] At present, the number of wiring layers of large-scale integrated circuits is constantly increasing, and each layer requires global planarization. Chemical-Mechanical Polishing (CMP) is the only method that can achieve global planarization. In the past, CMP's research work was mainly concentrated in the United States with SEMTECH as the main consortium. Under its promotion, CMP technology first entered the process line application in the United States in 1994. Subsequently, Japan began to introduce the CMP process into its 0.5μm process line oxide film planarization process in early 1995. It began to be used for tungsten planarization process in 1996 and has now developed globally, such as the European consortium JESS Engineering, France Rese...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768B08B1/02B08B3/08B08B1/20
CPCB08B3/08C11D11/0047C11D3/0073H01L21/02074C11D2111/22
Inventor 刘玉岭牛新环王辰伟何彦刚
Owner HEBEI UNIV OF TECH
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