Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation process for growing zinc oxide nanorod arrays by two-step method

A zinc oxide nanorod, a preparation process technology, applied in the directions of zinc oxide/zinc hydroxide, crystal growth, single crystal growth, etc., to achieve the effects of high crystallinity, good electron transport ability, and large specific surface area

Inactive Publication Date: 2012-05-09
XIANGFAN UNIVERSITY
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, so far, there has been no work to develop a soft electrochromic device using indium tin oxide conductive polyester film as a substrate, growing a one-dimensional ZnO nano-array material with good conductivity on it, and using this array as a working electrode. It is reported that it is difficult to directly grow ZnO nano-array materials on indium tin oxide conductive polyester films under normal circumstances.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation process for growing zinc oxide nanorod arrays by two-step method
  • Preparation process for growing zinc oxide nanorod arrays by two-step method
  • Preparation process for growing zinc oxide nanorod arrays by two-step method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0021] Embodiment: The preparation process of ZNRs with good growth density and orientation is as follows:

[0022] 1. Select the indium tin oxide conductive polyester film with a thickness of 0.25mm and good conductivity and cut it into the required size, wash it with absolute ethanol and dry it for later use;

[0023] 2. Under the condition of 60℃ water bath, slowly add 0.03M sodium hydroxide ethanol solution to 0.01M zinc acetate dihydrate ethanol solution, and form ZnO crystal nucleus colloid after stirring for 2 hours;

[0024] 3. Spin-coat the prepared ZnO crystal nucleus colloid on the cleaned and dried indium tin oxide conductive polyester film with a coater to pre-prepare the ZnO seed crystal;

[0025] 4. Set the speed of the homogenizer to 500r / min, spin-coat 2 layers of ZnO seed crystals, control the interlayer drying temperature to 45°C, and the drying time to 10min, then dry it for use;

[0026] 5. Growth of ZNRs: In 200mL of deionized water, add about 3g (0.05M)...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation process for growing ZnO nanorod arrays (ZNRs) on an indium tin oxide conductive polyester film by a two-step method, which comprises the steps of: pre-preparing ZnO seed crystals by using the prepared ZnO crystal nucleus colloid on the indium tin oxide conductive polyester film through a glue homogenizing method or a pulling method; and then growing the ZNRs by using a low-temperature liquid phase method. The 'two-step method' solves the problem that the ZNRs cannot be grown on the indium tin oxide conductive polyester film directly, and can also prepare the ZNRs with different densities according to requirements. The one-dimensional ZNRs have good application prospects in the fields such as nanometer electrons, photoelectrons, flexible electrochromismdevices and the like.

Description

technical field [0001] The invention belongs to the technical field of oxide microstructure materials and low-temperature liquid-phase method preparation, and specifically relates to a method for pre-preparing zinc oxide (ZnO) species on indium tin oxide conductive polyester film in the first step by using a glue leveling method or a pulling method. Crystal, the second step is the preparation process of growing ZnO nanorod arrays (ZNRs) by low temperature liquid phase method. Background technique [0002] As a non-toxic, N-type semiconductor material with a wide energy gap (Eg=3.39eV), ZnO has already become one of the most important multifunctional semiconductor materials that people generally pay attention to, and one-dimensional semiconductor ZnO nanostructures, such as nanowires , nanorod, nanotube structure, due to its large specific surface area, high degree of crystallization and good electron transport ability, it has good applications in many fields such as nanoelec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C26/02C30B29/16C01G9/02H05B33/10
Inventor 胡安正黄新堂
Owner XIANGFAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com