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Organic LED by adopting doped metallic oxide as hole injection structure

A technology of light-emitting diodes and hole injection, which can be used in organic chemistry, electrical components, circuits, etc., and can solve problems that have not yet been seen.

Inactive Publication Date: 2010-08-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, there has been no report on devices using transition metal oxides doped with perylene derivative materials with electron transport properties as hole injection layers.

Method used

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  • Organic LED by adopting doped metallic oxide as hole injection structure
  • Organic LED by adopting doped metallic oxide as hole injection structure
  • Organic LED by adopting doped metallic oxide as hole injection structure

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[0042] We have prepared an organic light-emitting diode related to the present invention, and its device structure is indium tin oxide glass (ITO) / molybdenum oxide doped perylenetetracarboxylic dianhydride MoO 3 :PTCDA (1:X, weight ratio) 10nm / N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'-di Amine (NPB) 70nm / 8-Hydroxyquinoline Aluminum (Alq 3 ) 60 nm / Lithium fluoride (LiF) 1 nm / Aluminum (Al) 120 nm. (X=2, 4, 6). Combine it with undoped devices indium tin oxide (ITO) / molybdenum oxide (MoO 3 ) 10 nm / N, N'-bis(1-naphthyl)-N, N'-diphenyl-1,1'-diphenyl-4,4'-diamine (NPB) 70 nm / 8- Aluminum hydroxyquinoline (Alq 3 ) 60 nm / Lithium fluoride (LiF) 1 nm / Aluminum (Al) 120 nm and device indium tin oxide glass (ITO) / perylenetetracarboxylic dianhydride 10 nm / N,N'-bis(1-naphthyl)- N,N'-diphenyl-1,1'-diphenyl-4,4'-diamine (NPB) 70 nm / 8-hydroxyquinoline aluminum (Alq 3 )60nm / lithium fluoride (LiF)1nm / aluminum (Al)120nm comparison, figure 2 with image 3 The optoelectronic prope...

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Abstract

The invention discloses an organic LED by adopting doped metallic oxide as a hole injection structure, which comprises a transparent anode, an organic hole injection layer, an organic hole transmission layer, an organic luminescent layer, an organic electronic transmission layer and a cathode; wherein the organic hole injection layer is deposited on the transparent anode and the area of the organic hole injection layer is smaller than that of the transparent anode; the organic hole injection transmission layer is deposited on the organic hole injection layer; the organic luminescent layer is deposited on the organic hole injection transmission layer; the electronic transmission layer is deposited on the organic luminescent layer; the cathode is deposited on the organic electronic transmission layer and the area of the cathode is smaller than that of the organic electronic transmission layer.

Description

technical field [0001] The invention relates to the preparation of an organic light-emitting diode, in particular to an organic light-emitting diode that uses a high-work function transition metal oxide doped with a high-stability perylene derivative material as a hole injection structure, which can be applied to visible light and Emission of near-infrared light. Background technique [0002] Organic light-emitting diodes (OLEDs) have the characteristics of a wide range of material selection, low driving voltage, full-cure active light emission, light weight, wide operating temperature range, and can be fabricated on soft substrates, which can meet the requirements of display technology in today's information technology era. The requirement for higher performance and greater information capacity has become one of the hottest topics in the scientific and industrial circles. In addition, due to the high efficiency and low cost of OLED, its application prospect in the lighting...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54C07C211/54C07D215/30
Inventor 李林森关敏曹国华曾一平李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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