Semiconductor package and method of packaging the same

Abstract

The invention relates to a semiconductor package and a method of packaging the same, wherein the method comprises the following steps: setting wafers on a bearing piece; inert gas passing through the periphery of the line end of the linear part of the copper welding wire so that the line end is formed into a ball part, wherein the distance between each edge of the ball part and the central line of the copper welding wire is basically equal, and the linear part and the ball part respectively have a line diameter D1 and a ball diameter D2, and D2 is larger than or equal to 2*D1 and is smaller than or equal to 2.5*D1; bonding the ball part to the pad of the wafer, wherein the ball part is formed into arc bonding part after bonding, the distance between each edge of the arc bonding part and the central line of the copper welding wire is basically equal, the linear part after bonding has a cross section diameter D1', the arc bonding part has a cross section diameter D2', and D2' is larger than or equal to 1.8*D1' and is smaller than or equal to 3*D1'; and coating the wafer and the copper welding wire and covering the bearing piece so that a sealing compound, the wafer and the bearing piece form the package. In the electric burning process of the ball part of the copper welding wire in the method of packaging the semiconductor, the inert gas can efficiently prevent oxygen gas from being contacted with copper, thus copper is not easy to oxidize even at high electric burning temperature; therefore, the invention has the benefit that the ball part is in the shape of a ball successfully.

Description

technical field [0001] The invention relates to a semiconductor packaging method and a wire bonding process of the semiconductor packaging method. Background technique [0002] refer to figure 1 In the manufacturing process of the semiconductor package, the technology of the wire bonding method widely applies the wire bonding 14 to the electrical connection between the pads 11 of the chip 10 and the pads 13 of the substrate 12 . The wire bonding process is mainly based on gold wires, but copper wires have the advantage of low cost. Compared with gold, copper has better electrical and thermal conductivity, which can make the wire diameter of the copper bonding wire smaller and the heat dissipation efficiency is better. However, copper has the disadvantages of insufficient ductility and easy oxidation, which still limits the application of copper wires. [0003] At present, copper bonding wires can only be applied to large-sized die pads or die pads of low-k material (low-K...

AI Technical Summary

Problems solved by technology

[0005] However, in the electric firing process of the copper ball 24, due to the high electric firing temperature, the copper is prone to oxidation, which in turn causes the spherical failure of the copper ball 24 (that is, non-spherical shape)

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