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Method for manufacturing organic field effect transistor with bottom electrode structure

A manufacturing method and bottom electrode technology, applied in the direction of electrical solid devices, semiconductor/solid device manufacturing, circuits, etc., can solve the problems of low efficiency and achieve the effects of increasing injection efficiency, simple process, and reducing contact potential difference

Active Publication Date: 2012-05-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Description
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Problems solved by technology

However, the efficiency of this method is not very high, so a method is urgently needed to improve the contact between organic matter and electrodes and improve the performance of devices.

Method used

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  • Method for manufacturing organic field effect transistor with bottom electrode structure
  • Method for manufacturing organic field effect transistor with bottom electrode structure
  • Method for manufacturing organic field effect transistor with bottom electrode structure

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Embodiment Construction

[0029] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.

[0030] The method for fabricating an organic field effect transistor with a bottom electrode structure provided by the present invention is to add a layer of vacuum-evaporated organic semiconductor material between the electrode and the gate dielectric layer. This layer of semiconductor material reduces the contact effect between the lower electrode and the organic semiconductor layer material to improve performance. This layer of organic semiconductor material can be the active layer material or a similar organic semiconductor material. The work function between them is close, and the contact between the electrode and the active layer is changed to a top electrode contact mode, and the effective injection area is larg...

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Abstract

The invention discloses a method for manufacturing an organic field effect transistor with a bottom electrode structure. The method is characterized in that a layer of vacuum vapor plating organic semiconductor material is added between an electrode and a grate dielectric layer. The layer of semiconductor material reduces the contact effect between the lower electrode and the organic semiconductor layer material so as to improve the performance. The layer of organic semiconductor material can be an active layer material or a similar organic semiconductor material. The work functions between the semiconductor material and the electrode are approximate, and the contact mode of the electrode and an active layer is changed into a top electrode contact mode, so the effective injection area is larger. The method produces the organic field effect transistor which is manufactured by using the traditional photoetching process and has the performance of the top electrode structure.

Description

Technical field [0001] The invention relates to the technical field of microfabrication in organic semiconductor science, in particular to a method for manufacturing an organic field effect transistor with a high-performance bottom electrode structure. Background technique [0002] With the continuous deepening of information technology, electronic products have entered every aspect of people’s life and work; in daily life, people’s demand for low-cost, flexible, low-weight, and portable electronic products is increasing; traditionally based on inorganic semiconductors It is difficult for material devices and circuits to meet these requirements. Therefore, organic microelectronic technology based on organic polymer semiconductor materials that can achieve these characteristics has attracted more and more attention under this trend. Improving the performance of organic field effect tubes has always been the goal pursued in this field. In addition to materials and processes that h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/40
Inventor 刘舸刘明刘兴华商立伟王宏柳江
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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