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Intermediate infrared antimonide laser device structure adopting DWELL

A technology of antimonides and lasers, which is applied to lasers, laser components, semiconductor lasers, etc., can solve problems such as difficulty, affecting device performance, and low efficiency of a single quantum dot layer, so as to improve efficiency, improve overall performance, and improve electro-optic The effect of conversion efficiency

Inactive Publication Date: 2010-05-05
CHANGCHUN UNIV OF SCI & TECH
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Problems solved by technology

[0004] The research on antimonide materials and devices is quite difficult: the effects of carrier absorption, Auger recombination, and surface recombination in narrow-band mid-infrared semiconductor devices are relatively large, which affects device performance.
Quantum dot mid-infrared laser is a promising device. Compared with competing quantum well devices, this low-dimensional structure device has the advantages of high efficiency and no need for cooling, but the efficiency of a single quantum dot layer is low. It is not easy to correct this shortcoming by simply growing more layers of quantum dots, as this would create strain dislocations in the epitaxial layer

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  • Intermediate infrared antimonide laser device structure adopting DWELL

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Embodiment Construction

[0009] like figure 1 As shown, a mid-infrared antimonide laser structure using DWELL includes: n-type GaSb substrate (1), n-type GaSb buffer layer (2), n-type Al 0.9 Ga 0.1 As 0.03 Sb 0.97 Lower confinement layer (3), n-type Al 0.3 Ga 0.7 As 0.02 Sb 0.98 Lower waveguide layer (4), DWELL layer (5), DWELL layer (5) including barrier layer Al 0.3 Ga 0.7 As 0.02 Sb 0.98 (6), quantum well layer In 0.2 Ga 0.8 As 0.02 Sb 0.98 (7), InGaSb quantum dot layer (8), p-type Al 0.3 Ga 0.7 As 0.02 Sb 0.98 Upper waveguide layer (9), p-type Al 0.9 Ga 0.1 As 0.03 Sb 0.97 An upper confinement layer (10), a p+ type GaSb ohmic layer (11). The substrate (1) is the substrate for material epitaxial growth, using a Te-doped GaSb substrate; a 0.5 μm Te-doped GaSb buffer layer (2) is grown; the lower confinement layer is Al with a thickness of 1.2 μm and an Al content of 0.9 0.9 Ga 0.1 As 0.03 Sb 0.97 Layer (3); the lower waveguide layer is Al with a thickness of 0.35 μm and an ...

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Abstract

The invention discloses an intermediate infrared antimonide laser device structure adopting DWELL, namely the intermediate infrared laser structure of DWELL, wherein, a DOT is embedded in a WELL, and the efficiency of the device is improved by increasing the number of the validity period of DWELL in the device. In component of active area is reduced, and quantum dots, well width and covering layers are optimized to reduce epitaxial layer strain to the minimum. As the emission efficiency and optical gain of the quantum dots are stronger than quantum wells; the capture ability, reflectivity and optical limiting ability of DWELL to electrons are stronger than single-layered quantum dots and multi-quantum dot structure, and the DWELL structure has higher emission efficiency. The intermediate infrared laser of the DWELL structure has both characteristics of the traditional quantum well and a quantum dot laser, and the carrier in DWELL has higher composite efficiency, thus the laser structure can work under higher temperature.

Description

technical field [0001] The invention relates to the technical field of semiconductor laser materials, and belongs to the field of epitaxial structure of new semiconductor laser materials. Background technique [0002] The mid-infrared band shows great application potential in the field of optoelectronic device applications, especially the 2-10μm band: atmospheric optical detection and environmental monitoring, free space optical communication, infrared testing, clean energy, biotechnology and thermal imaging. For example, the fingerprint characteristic lines of many pollutants and toxic gases and liquids fall in this band: methane (3.3 μm), CO 2 (4.6μm), CO (4.2μm), NO x (6.5μm) Online accurate measurement of multi-components in various complex environments, high concentrations and large ranges (ppb down to 100%). The mid-infrared band also requires high-sensitivity and high-sensitivity pharmaceuticals, and it also shows unique application value in biomedical imaging, and ...

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Application Information

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IPC IPC(8): H01S5/00H01S5/343H01S5/028
Inventor 尤明慧高欣李占国刘国军李林李梅王勇乔忠良邹永刚邓昀王晓华李联合
Owner CHANGCHUN UNIV OF SCI & TECH
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