Method for preparing SiBCN(O) ceramic material
A technology of ceramic materials and ceramic precursors, which is applied in the field of preparation of multi-component ceramic materials, can solve the problems of high cost, complicated operation, and poor safety of SiBCN ceramic materials, and achieve the effects of low toxicity, simple operation, and low production cost
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specific Embodiment approach 1
[0007] Specific embodiment one: the preparation method of SiBCN (O) ceramic material in the present embodiment is as follows: one, silicon source and boron source are added in the solvent according to the molar ratio of 3~9: 1 to make mixture, then the mixture is vacuum Stir in a reactor with a pressure of 0.01MPa to 0.03MPa for 30h to 60h, then add ammonium carbamate, then raise the temperature in the reactor to 40°C to 200°C and keep it warm for 30h to 100h, stir while keeping it warm, and then put the reaction The temperature in the kettle is lowered to room temperature; 2. Vacuum filter the product obtained in the reaction kettle in step 1 under the conditions of a vacuum degree of 0.01MPa to 0.02MPa and a temperature of 60°C to 100°C to obtain SiBCN(O) ceramics Precursor; 3. Pyrolyze the SiBCN(O) ceramic precursor under the protection of an inert gas at a temperature of 1000°C to 1200°C for 1h to 3h, and then cool to room temperature to obtain a SiBCN(O) ceramic material; ...
specific Embodiment approach 2
[0010] Embodiment 2: This embodiment differs from Embodiment 1 in that the boron source in step 1 is sodium borohydride, potassium borohydride, borane or boron trichloride. Others are the same as in the first embodiment.
[0011] The SiBCN(O) ceramic material obtained in this embodiment does not crystallize and decompose under the condition of 1500° C. for a long time, and has excellent oxidation resistance.
specific Embodiment approach 3
[0012] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that the silicon source described in step one is methylvinyldichlorosilane, vinyltrichlorosilane, vinyldichlorosilane, divinylbenzene One or a combination of chlorosilane and trivinylchlorosilane. Others are the same as in the first or second embodiment.
[0013] When the silicon source described in this embodiment is a composition, various silicon sources are mixed in any ratio.
[0014] The SiBCN(O) ceramic material obtained in this embodiment does not crystallize and decompose under the condition of 1500° C. for a long time, and has excellent oxidation resistance.
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