Bidirectional trigger diode chip production method

Abstract

The invention discloses a bidirectional trigger diode chip production method, belonging to the filed of the semiconductor device production technology. The independent bidirectional trigger diode chipis produced according to the following processing steps of silicon slice cleaning, first-time diffusing, second-time cleaning, second-time diffusing, first-time photoetching, table-top forming, glasspassivating, second-time photoetching, two-surface coating, third-time photoetching, fourth-time photoetching and final scribing. The breakdown voltage of the bidirectional trigger diode chip can beadjusted in a large range according to the requirement of the user; the bidirectional trigger diode chip can be packaged in various ways so as to meet the requirements of different users and circuits;the reliability of the bidirectional trigger diode chip is improved due to the fourth-time photoetching process; and the bidirectional trigger diode chip can be used for the production of the four-inch silicon slice so that the production efficiency of the four-inch silicon slice is improved and the finished product ratio is high.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a bidirectional trigger diode. Background technique [0002] The more advanced technology in today's bidirectional trigger diode chip manufacturing is to use a low-resistivity P+ type double-grinding single chip for preparation. The process steps are: pickling, cleaning, diffusion, groove, glass passivation, electroplating, alloying , electroplating, testing, scribing, and splitting. The disadvantages of this method are: the breakdown voltage of the product is determined by the resistivity of the selected material and cannot be adjusted; the electrodes of the product are formed by electroplating, and the electrodes on the front and back sides The material is the same, so only axial packaging can be used, and the packaging form of the product is single; scribing directly on the glass passivation layer will affect the reliability of the...

AI Technical Summary

Problems solved by technology

[0002]The more advanced technology in the manufacture of bidirectional trigger diode chips today is to use a low-resistivity P+ type double-grinding single chip for preparation, and the process steps are: pickling , cleaning, diffusion, grooving, glass passivation, electroplating, alloying, electroplating, testing, scribing, and splitting. The disadvantage of this method is that the breakdown voltage of the product is determined by the resistivity of the selected material and cannot be adjusted; The electrodes of the product are formed by electroplating, and the electrode materials on the front and back sides are the same, so only axial packaging can be used, and the packaging form of the product is single; directly scribing on the glass passivation layer will affect the reliability of the product; in order to achieve The negative resistance performance of the product must be produced with ultra-thin silicon single crystal materials (silicon wafer thickness 100 μm), so only 2-inch or 3-inch small-diameter silicon wafer materials can be used for production, which is not convenient for the expansion of production volume and is easy to fragment , causing inconvenience to the operation

Images