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Processing method for copper target material

A processing method and technology for copper targets, which are applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of reduced performance of copper targets, inability to meet target requirements, rust, etc. Scratching, deformation reduction, cost reduction effect

Active Publication Date: 2010-01-06
KONFOONG MATERIALS INTERNATIONAL CO LTD
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Problems solved by technology

[0004] At present, when copper is processed to make targets, it is found that oxygen-free copper (metal copper with a purity of 99.995%) is easily oxidized (rusted) by interacting with oxygen, water and carbon dioxide in the air during high-speed processing. The performance of the copper target is reduced, and even the target cannot meet the requirements

Method used

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  • Processing method for copper target material
  • Processing method for copper target material
  • Processing method for copper target material

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Embodiment approach

[0025] refer to figure 1 As shown, an embodiment of the processing method of the copper target of the present invention includes:

[0026] Step s1, fixing the copper workpiece with a full-circumference fixture, and performing the first mechanical processing;

[0027] Step s2, performing stress release on the copper workpiece;

[0028] Step s3, fixing the copper workpiece with a full-circumference fixture, and performing the second machining, the precision of which is higher than that of the first machining;

[0029] In step s4, the copper workpiece is fixed with a peripheral fixture, and the third machining is performed, the precision of which is higher than or equal to that of the second machining, and spray cooling is adopted.

[0030] In the above embodiment, the first machining is rough machining, the purpose of which is to remove most of the allowance of the copper workpiece to obtain a more regular semi-finished product, that is, to cut out the approximate shape of the...

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Abstract

The invention provides a processing method for copper target materials, comprising the following steps: mechanical processing is carried out on a copper workpiece for three times with gradually increasing accuracy, wherein spray cooling is adopted during the third mechanical processing, a full-wave clamp is adopted for fixing the copper workpiece in three times of mechanical processing processes, and stress release is carried out on the copper workpiece at least between the first mechanical processing and the second mechanical processing. The processing method for the copper target materials can prevent oxidation of copper in a mechanical processing process, and enable the copper target materials to obtain better consistency of surface grains and lower surface roughness.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a copper target processing method. Background technique [0002] The quality of thin films formed on substrates by sputtering methods can be affected by the surface roughness of the target used for sputtering. When protrusions with a size exceeding a certain level exist on the target surface, abnormal discharge (micro-arc discharge) may be generated on the protrusions. The abnormal discharge can cause large particles to be splashed from the surface of the target and deposited on the substrate. Deposited large particles can form spots on thin films and cause short circuits in semiconductor devices. [0003] Many materials can be used to make targets, including copper, aluminum, titanium, and more. In specific applications, the target material may include an alloy or a mixture of other metals, such as one or more of copper, aluminum, and titanium. Targets may also com...

Claims

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Application Information

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IPC IPC(8): C22F1/08C23C14/34C23C14/14
Inventor 姚力军潘杰王学泽鲍伟江刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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