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Temperature measurement method taking carborundum crystals irradiated by neutrons as sensor

A technology of silicon carbide and sensors, which is applied in the field of measurement and testing, can solve the problems that the research results have not been made public, and achieve the effects of simple operation, wide application and high testing accuracy

Inactive Publication Date: 2009-12-09
AECC SHENYANG ENGINE RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since June 2003, the Shenyang Engine Design Institute of AVIC has entrusted Tianjin University with two projects to carry out research on non-invasive crystal temperature measurement, and the research results have not yet been made public.

Method used

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  • Temperature measurement method taking carborundum crystals irradiated by neutrons as sensor
  • Temperature measurement method taking carborundum crystals irradiated by neutrons as sensor
  • Temperature measurement method taking carborundum crystals irradiated by neutrons as sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Example 1: The total flux is 1.72×10 19 / cm 2 F-T curves of thermometric crystals irradiated by neutrons

[0042] Nitrogen-doped 6H-SiC crystals (resistivity at room temperature 2×10 5 Ωcm, light green in appearance) is a temperature measuring crystal, processed into 6×6×0.3mm 3 flakes (see figure 1 ) and irradiated with mixed field neutrons, the neutron flux rate of the irradiation source was 2.3×10 13 cm -2 ·s -1 , where the fast neutron flux rate is 5×10 12 cm -2 ·s -1 , the total flux of irradiation is 1.72×10 19 cm -2 , the temperature in the neutron channel at the time of irradiation is 60-80°C. After irradiation, the sample was annealed isochronously, and a data was made every 100°C and kept for 20 minutes, and the half-height width of the X-ray diffraction peak of the (006) plane of the temperature-measuring crystal was measured respectively, so as to obtain the F-T curve. The half-height width of the X-ray diffraction peak was measured using a Jap...

Embodiment 2

[0043] Example 2: Observation of dislocations in thermometric crystals

[0044] The defects of thermometric crystals (nitrogen-doped 6H-SiC) before and after irradiation or before and after annealing were observed by chemical etching method, using molten KOH and K 2 CO 3 The mixed solution is used as the etchant, and the ratio of the etchant is KOH:K 2 CO 3 =30:0.75 (weight ratio), the etching process is to keep warm at 410°C for 20 minutes. Observing the surface morphology of the etched crystal with optical microscope and SEM, a large number of dislocation pits can be clearly observed on the Si surface. Figure 4 , 5 , 6 are the dislocation topography diagrams of the original sample (non-irradiated and unannealed sample), the irradiated non-annealed sample, and the irradiated sample annealed at 1200°C, respectively, and the magnifications are 200 times. Figure 4 , 5 The results shown in 6 and 6 show that the unirradiated original sample already contains a certain densi...

Embodiment 3

[0045] Embodiment 3: isothermal annealing of thermometric crystal

[0046] Using the sample temperature control system that comes with the Dutch XPERTPRO X-ray diffractometer, the total throughput is 5.74×10 18 / cm 2 The thermometric crystal irradiated by neutrons was isothermally annealed, and the full width at half maximum of the X-ray diffraction peak of the (006) plane of the sample was measured and recorded "on-line" (instantly). Measurements were made at 8 time points within 2 hours, and the measurement time intervals ranged from 5 minutes to 1 hour. The obtained 8 XRD lines were all recorded in Figure 7 among. exist Figure 7 Among them, 8 XRD lines are highly overlapped, indicating that the full width at half maximum (reflecting the dislocation density) of the X-ray diffraction peak of the thermometric crystal is only related to the annealing temperature, but not to the annealing time.

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Abstract

The invention relates to a temperature measurement method taking carborundum crystals irradiated by neutrons as a sensor. The temperature measurement method comprises the following steps that: a plurality of 6H-SiC crystals which are small blocks, are in the same batch and are doped with nitrogen are used as temperature measurement crystals, annealing treatment of different temperatures T is respectively carried out after neutron irradiation is carried out, then the half high width F of the X-optical diffraction peak of each temperature measurement crystal after annealing is respectively tested, the F is used as longitudinal coordinate, the T is used as horizontal coordinate, and an F-T standard curve is mapped; and the temperature measurement crystals irradiated by the neutron in the previous step are embedded into the surface layer or the surface of an article to be tested and high-temperature running is carried out along with a work system containing the article to be tested, then the temperature measurement crystals are taken out, the half full width of the temperature measurement crystals is tested, the half width is compared with the F-T standard curve to find out a temperature value corresponding to the half full width value, and the temperature is just the maximum working temperature of the article to be tested. The method has obvious non-incursion type characteristic, does not need site interpretation, can be used for the temperature test of the high-temperature work system with more than 1200 DEG C and has high testing precision and simple and convenient operation.

Description

【Technical field】: [0001] The invention belongs to the technical field of measurement and testing, in particular to a temperature measurement method using silicon carbide crystals irradiated by neutrons as sensors. 【Background technique】: [0002] For modern science and technology, national defense and major civil equipment and facilities, for high temperature testing, especially for high temperature testing of closed working systems, a non-intrusively testing method is proposed without implanting wired sensors such as thermocouples and optical fibers. need. All advanced industrial countries in the world have invested a lot of manpower and material resources in non-invasive high-temperature measurement technology, and have made great progress. Judging from the existing published literature, the current international and domestic tests for low temperature (500-800°C) and medium temperature (800-1200°C) are generally solved well. For the temperature test not exceeding 1200°C...

Claims

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Application Information

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IPC IPC(8): G01K11/30
Inventor 阮永丰张兴马鹏飞薛秀生李文润张玉新
Owner AECC SHENYANG ENGINE RES INST
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