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Sn-B plating solution and plating method using it

An electroplating solution, sn-b technology, applied in the field of Sn-B electroplating solution, can solve problems such as shedding, cracks in the electroplating layer, and eutectoid difficulties

Active Publication Date: 2009-12-02
ILJIN COPPER FOIL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, the Sn-Bi alloy cannot sufficiently suppress the generation of whiskers, and there is a significant difference in deposition potential between Sn and Bi, and thus eutectoid is difficult
In addition, when the concentration of Bi in the solution is high, Bi is deposited on the cathode surface and may fall off after soldering.
In addition, when the Bi content in the plating layer is high, cracks may form in the plating layer when the plating layer is bent

Method used

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  • Sn-B plating solution and plating method using it
  • Sn-B plating solution and plating method using it

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Prepare 15g / L tin sulfate, 30ml / L H 2 SO 4 , 10g / L cresol sulfonic acid, 0.1g / L β-naphthol and 0.1g / L gelatin plating solution.

[0045] In experiment 1, 0.1 g / L of DMAB was further added to the plating solution, in experiment 2, 0.5 g / L of DMAB was further added to the plating solution, and in experiment 3, 3 g / L of DMAB was further added to the plating solution. L's DMAB.

[0046] Electroplating is performed under the same electroplating conditions as described above. In other words, the Cu plate is used as the cathode and the soluble Sn is used as the anode, and the current density is 1A / dm 2 , And the plating temperature is room temperature.

[0047] The plating layers of Experiment 1 to Experiment 3 were stored at room temperature for 12 months, and then it was determined whether whiskers were generated on the surface of the plating layer.

[0048] figure 1 (A) to (c) are scanning electron microscope (SEM) photographic images respectively illustrating the surface sta...

Embodiment 2

[0050] Prepare 30g / L tin sulfate, 50ml / L H 2 SO 4 , 20g / L cresol sulfonic acid, 0.3g / L β-naphthol and 0.5g / L gelatin plating solution.

[0051] In experiment 4, 0.1 g / L of DMAB was further added to the plating solution, in experiment 5, 0.5 g / L of DMAB was further added to the plating solution, and in experiment 6, 3 g / L of DMAB was further added to the plating solution. L's DMAB.

[0052] Electroplating was performed under the same electroplating conditions as in Example 1. The plating layers of Experiment 4 to Experiment 6 were stored at room temperature for 12 months, and then it was determined whether whiskers were generated on the surface of the plating layer.

[0053] figure 2 (A) to (c) are SEM photographic images respectively illustrating the surface state of the electroplated layer in Experiment 4 to Experiment 6 after the room temperature storage test.

Embodiment 3

[0055] Prepare 50g / L tin sulfate and 70ml / L H 2 SO 4 , 40g / L cresol sulfonic acid, 0.5g / L β-naphthol and 1.0g / L gelatin plating solution.

[0056] In experiment 7, 0.1 g / L of DMAB was further added to the plating solution, in experiment 8, 0.5 g / L of DMAB was further added to the plating solution, and in experiment 9, 3 g / L of DMAB was further added to the plating solution. L's DMAB.

[0057] Electroplating was performed under the same electroplating conditions as in Example 1. The plating layers of Experiment 7 to Experiment 9 were stored at room temperature for 12 months, and then it was determined whether whiskers were generated on the surface of the plating layer.

[0058] image 3 (A) to (c) are SEM photographic images respectively illustrating the surface state of the electroplated layer in Experiment 7 to Experiment 9 after the room temperature storage test.

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Abstract

The object of the present invention is to prevent generation of whisker in a Pb-free plating layer. Provided is a Pb-free Sn-B plating solution containing tin sulfate, which is a source of Sn ions, and dimethyl amine borane or trimethyl amine borane, which is a source of B ions.

Description

Technical field [0001] The present invention relates to a lead-free Sn-B electroplating solution (hereinafter referred to as Pb-free Sn-B electroplating solution), and a plating method using the electroplating solution, in particular to a method that can prevent A Pb-free Sn-B electroplating solution that generates whiskers, and an electroplating method using the electroplating solution. Background technique [0002] The semiconductor lead frame is one of the most important components for manufacturing semiconductor packaging devices with semiconductor chips. The semiconductor lead frame serves as a lead connecting the semiconductor wafer and an external circuit, and serves as a frame supporting the semiconductor wafer. Depending on the high density or integration of semiconductor chips or the method of mounting the semiconductor chips on the substrate, semiconductor lead frames have various shapes. [0003] Basically, a semiconductor lead frame is formed by the following parts: ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/30
CPCC25D3/60C25C3/30C25D3/30
Inventor 李东宁金相范姜奎植
Owner ILJIN COPPER FOIL
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