A metal oxide semiconductor P-N junction schootky diode structure and the production method thereof

Abstract

The invention provides a metal oxide semiconductor P-N junction schootky diode structure and the production method thereof, and the method comprises the following steps: providing a base plate; forming a first mask layer on the base plate; carrying out the first photoetching process to from a ditch structure; carrying out the first ion injection in the first ditch structure; carrying out the second photoetching process to form a side wall structure; forming a second mask layer on the bottom of the ditch structure and the side wall structure; carrying out the third photoetching process on the base plate to form a gate structure in the ditch structure; carrying out the second ion injection process in the ditch structure; after eliminating photoresist, carrying out the third ion injection process in the ditch structure; carrying out the fourth photoetching process; forming a metal layer on the gate surface of the obtained structure; carrying out the fifth photoetching process, and eliminating part of the metal layer. The invention has the advantages of both P-N junction and schootky diode.

Description

technical field [0001] The present invention relates to a metal oxide semiconductor P-N junction Schottky diode structure and a manufacturing method thereof, especially having lower leakage current and lower forward conduction voltage drop value (V F ), a metal oxide semiconductor P-N junction Schottky diode structure with high reverse withstand voltage value and low reverse recovery time characteristics. Background technique [0002] Schottky diode is a unipolar element with electrons as carriers, and its characteristics are fast speed and forward conduction voltage drop value (V F ) is low, but the reverse bias leakage current is relatively large (related to the Schottky barrier value caused by the metal work function and semiconductor doping concentration). The P-N diode is a dual-carrier element that conducts a large amount of current. However, the forward operating voltage drop of the element (V F ) is generally higher than that of Schottky diodes, and the reaction s...

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Problems solved by technology

In fact, it is composed of two 300-volt trench Schottky diodes in series, and the forward conduction voltage drop value of the component (V F ) is also higher

How to design components to achieve higher reverse withstand voltage (such as above 600 volts), lower forward conduction voltage drop (V F ), lower reverse leakage current and lower reverse recovery time (Reverse Recovery Time; t RR ), that is to say, has a fast reaction speed, which is really a big challenge

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