Superimposition marker and method for producing the same
A manufacturing method and marking technology, which are used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as defects in the active region, collapse of overlapping marks, etc., so as to avoid problems where the overlapping error value cannot be measured. Effect
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[0038] To make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.
[0039] Figure 1A to Figure 1C It is a top view of the manufacturing process of the superposition mark according to the embodiment of the present invention. Figure 2A to Figure 2C According to Figure 1A to Figure 1C The cross-sectional view of the production process of the superimposed marker shown in the I-I section in . In particular, in the following description of the present invention, the film layers used to form the overlay mark in the peripheral area are all in the same process step as the film layers used to form the non-volatile memory in the component area. formed in.
[0040] First, referring to FIG. 1A and FIG. 2A simultaneously, a hard mask layer 102 is formed on the substrate 100 in the peripheral area. The substrate 100 is, for example, a silicon su...
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