Super capacitor plate material and preparation method thereof

A technology for supercapacitors and plates, which is applied in the direction of capacitor electrodes, capacitor parts, metal material coating technology, etc., can solve the problems of inability to integrate, and achieve the effects of low price, simple preparation, and large charge storage capacity

Inactive Publication Date: 2009-08-19
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these materials generally still need to be loaded on carbon nanotubes or porous alumina substrates to make supercapacitor electro

Method used

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  • Super capacitor plate material and preparation method thereof
  • Super capacitor plate material and preparation method thereof
  • Super capacitor plate material and preparation method thereof

Examples

Experimental program
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preparation example Construction

[0037] Concrete preparation method is:

[0038] A. The fabrication process of electrochemical corrosion microchannels based on MEMS technology has been described in detail in patent 200610025900. The main process is to first use photolithography to define the position of the hole in the silicon wafer, perform pre-etching, and stop etching when the hole is in the shape of an inverted square truss; Then the back side is thinned to the etched position; then the unetched part in the middle is separated by ultrasonic separation, and the silicon microchannel (MicrochannelPlate, abbreviated as MCP, abbreviated as silicon microchannel) thrown away from the substrate is obtained. For Si-MCP) structure.

[0039] The etched silicon microchannel SEM photo is as follows figure 1 shown.

[0040] B. Taking the silicon microchannel as a substrate, after surface pretreatment, deposit a nickel layer in an electroless nickel plating solution to make a Ni / Si-MCP (nickel / silicon microchannel) n...

Embodiment 1

[0044] The silicon microchannel is produced by electrochemical etching of the MEMS process, and the obtained silicon microchannel hole is a square, with a side length of 5 microns, a wall thickness of 1 micron, and a depth of 250 microns. Then use this silicon microchannel as the substrate, before the electroless nickel plating, soak the surface with 1% polyethylene glycol octyl phenyl ether solution for 30 seconds for surface pretreatment, deposit the nickel layer in the plating solution for 40 minutes, and make Ni / Si-MCP nanocomposite structure. Perform rapid thermal annealing on the fabricated Ni / Si-MCP nanocomposite structure. In an oxygen atmosphere, the annealing temperature is controlled at 500°C for 6 to 10 minutes to obtain NiO / Si-MCP (nickel oxide / silicon microchannel) nanostructures. Composite capacitor electrode material, NiO film thickness ℃ is about 500nm.

[0045] Put the prepared NiO / Si-MCP about 1cm 2 The area was used as the working electrode for electroch...

Embodiment 2

[0051] The silicon microchannel is produced by electrochemical etching of the MEMS process, and the obtained silicon microchannel hole is a square, with a side length of 5 microns, a wall thickness of 1 micron, and a depth of 250 microns. Then use this silicon microchannel as the substrate, before the electroless nickel plating, soak the surface with 1% polyethylene glycol octyl phenyl ether solution for 30 seconds for surface pretreatment, deposit the nickel layer in the plating solution for 30 minutes, and make Ni / Si-MCP nanocomposite structure. Perform rapid thermal annealing on the fabricated Ni / Si-MCP nanocomposite structure. In an oxygen atmosphere, the annealing temperature is controlled at 450°C for 6-10 minutes to obtain NiO / Si-MCP (nickel oxide / silicon microchannel) Nano composite capacitor electrode material, NiO film thickness ℃ is about 150nm.

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Abstract

The invention relates to a pole plate material of a super-capacitor, and a preparation method thereof, which are based on the micro-electro-mechanical-system silicon process and belong to the filed of capacitor manufacturing. In the pole plate material of the super-capacitor, a nickel protoxide thin film is wrapped on a silicon micro-channel substrate layer. The preparation method of the material comprises the following steps: an electrochemistry method is used for making a silicon micro-channel which is then taken as a substrate; after surface pretreatment is finished, a nickel layer is deposited in an electroless nickel plating solution; finally, fast thermal annealing is carried out in the atmosphere of oxygen; and nickel protoxide/silicon micro-channel compound material is formed. The pole plate material of the super-capacitor has large specific area and high chemical activity, is beneficial for electrolyte to be in better contact with active materials and can obtain relatively high charge storage capability and better capacitance characteristic; in addition, the combination of the pole plate material with the current micro-electronic processing technique can cause the super-capacitor to be easier for miniaturization and integration.

Description

technical field [0001] The invention relates to a supercapacitor pole plate material, in particular to a supercapacitor pole plate material combined with a semiconductor process, and also to a preparation method of the supercapacitor pole plate material. Background technique [0002] With the development of science and technology and the improvement of human living environment, the requirements for energy are becoming more and more diverse, and energy storage devices are also required to have higher energy density and power density to replace or assist the currently used batteries. [0003] Supercapacitors, also known as electrochemical capacitors, have supercapacitors of the Farad level, and their energy density is hundreds of times higher than that of traditional electrostatic capacitors. Its power density is nearly ten times higher than that of batteries, and its charge and discharge efficiency is high. Energy storage devices have received more and more attention. [000...

Claims

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Application Information

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IPC IPC(8): H01G9/04B81C1/00
CPCY02E60/13
Inventor 王连卫苗凤娟陶佰睿
Owner EAST CHINA NORMAL UNIV
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