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M-Sb-Se phase changing thin-film material used for phase changing memory

A phase change memory and thin film material technology, applied in the field of microelectronics, can solve the problems of phase change memory application limitations, poor CMOS process compatibility, poor thermal stability, etc., and achieve good data retention characteristics, good compatibility, and fast crystallization speed. Effect

Active Publication Date: 2009-07-22
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It has been reported in the literature that Sb-Te is a growth-limited phase change material, and Ge 2 Sb 2 Te 5 It is a nucleation-limited phase change material. Both types of materials contain Te element, which is a toxic element and is harmful to the environment. At the same time, it is poorly compatible with CMOS technology.
There have been patents that propose SbSe-based fast phase change materials, but this series of materials has poor thermal stability. 70 Se 30 For example, its crystallization temperature is only 120 degrees, so its application in phase change memory is limited

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  • M-Sb-Se phase changing thin-film material used for phase changing memory
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  • M-Sb-Se phase changing thin-film material used for phase changing memory

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Embodiment 1

[0027] In this embodiment, tungsten (W) element is used as M doping element, the content x of Sb is 65%-80 atomic percent, and the content y of W is 2%-6 atomic percent.

[0028] When the film is in an amorphous state, the film resistance is in a high-resistance state. As the temperature increases, the film begins to crystallize and undergo a phase transition, and at the same time shows a decrease in resistance. After the film crystallizes, the film resistance is in a low-resistance state. Phase-change memory devices can be realized by applying electric pulses, and amorphous high resistance and polycrystalline low resistance can be reversibly switched by applying pulses. Such as figure 2 As shown, in the relationship between resistance and annealing temperature of W-Sb-Se thin film with tungsten (W) content, the crystallization temperature of W-Sb-Se thin film increases with the increase of w content. When the composition of the phase change film material is (Sb 70 Se 30 )...

Embodiment 2

[0035] In this embodiment, aluminum (Al) is used as M doping element, the content x of Sb is 65%-80 atomic percent, and the content y of Al is 2%-10 atomic percent.

[0036] see Figure 5 , when the film is in an amorphous state, the film resistance is in a high-resistance state. As the temperature increases, the film begins to crystallize and undergo a phase transition, and at the same time shows a decrease in resistance. When the film crystallizes, the film resistance is in a low-resistance state. This process In phase-change memory devices, it can be realized by applying electric pulses, and amorphous high resistance and polycrystalline low resistance can be reversibly switched by applying pulses. In the relationship curve between the resistance of the Al-Sb-Se thin film and the annealing temperature, the crystallization temperature of the Al-Sb-Se thin film increases with the increase of the Al content. When the composition of the phase change film material is (Sb 70 Se ...

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Abstract

The invention discloses an M-Sb-Se phase transition film material used for a phase transition storage and the ingredient thereof is (SbxSe(1-x))(1-y)My, wherein y is an atomic ratio of 0.2%-15%, x is the atomic ratio of 50%-95%, and doping elements of M comprise one or two elements out of tungsten, aluminum, indium, silver, copper, nickel, gallium, titanium , tin, oxygen and nitrogen. The M-Sb-Se phase transition film material of the invention has faster crystallization rate, faster read-write rate and better data holding property than the commonly used Ge2Sb2Te5 material and better thermal stability than SbSe binary material. Meanwhile, the material is free from element Te, thereby being environment friendly, and the material has good compatibility with CMOS technique.

Description

technical field [0001] The invention relates to a thin film material in the technical field of microelectronics, in particular to an M-Sb-Se phase change thin film material used in a phase change memory. Background technique [0002] Memory occupies an important position in the semiconductor market. Only DRAM (Dynamnic Random Access Memory) and FLASH occupy 15% of the entire market. With the gradual popularization of portable electronic devices, the market for non-volatile memory is also growing. At present FLASH occupies the mainstream of non-volatile memory, accounting for about 90%. However, with the advancement of semiconductor technology, FLASH has encountered more and more technical bottlenecks. First, the floating gate for storing charges cannot be thinned indefinitely with the development of integrated circuit technology. In addition, other shortcomings of FLASH technology also limit Its applications, such as slow data writing, high power consumption when writing da...

Claims

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Application Information

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IPC IPC(8): H01L45/00G11C11/56C22C12/00
Inventor 凌云龚岳峰宋志棠封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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