Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Growth method of nonpolar ZnO crystal film

A growth method and non-polar technology, which is applied in the growth field of non-polar ZnO thin films, can solve the problems of weakening the confinement effect of quantum wells and unreachable device performance, and achieve the effects of easy implementation, simple operation and mature technology

Inactive Publication Date: 2009-07-15
ZHEJIANG UNIV
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

ZnOLEDs prepared with multiple quantum well structures have higher luminous efficiency and intensity, but since ZnO is usually c-axis (polar) preferred orientation, a self-built electric field is generated, which will greatly weaken the confinement effect of quantum wells , causing the device performance to fall short of what it should

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Growth method of nonpolar ZnO crystal film
  • Growth method of nonpolar ZnO crystal film
  • Growth method of nonpolar ZnO crystal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1) Preparation of ceramic target. Weigh ZnO and MnO with a purity of 99.99% 2 、Na 2 CO 3 Powder, wherein the molar percentage of Mn is 5%, the molar percentage of Na is 0.2%, and the ZnO, MnO 2 、Na 2 CO 3 The powder is poured into a ball mill jar equipped with agate balls, and ball milled on a ball mill for 24 hours, ZnO, MnO 2 、Na 2 CO 3 The powder is well mixed and finely ground. Then the raw materials are separated and dried, added with a binder for grinding, and pressed into shape. Put the formed green body into the sintering furnace, first keep it warm at 800°C for 2 hours to volatilize the binder, and then raise the temperature to 1250°C for 2 hours to obtain Mn-Na-doped Zn(Mn,Na)O ceramics target.

[0020] 2) Use a 2-inch quartz polished wafer as the substrate, clean the surface of the substrate and put it into the growth chamber of the pulsed laser deposition device. The vacuum degree of the growth chamber is pumped to 8.0×10 -4 Pa, then heat the subs...

Embodiment 2

[0025] The target preparation and film deposition process are the same as in Example 1, the difference is that the molar percentage of Mn is 3%, the molar percentage of Na is 1%, and the substrate temperature is 400°C, and the a-axis preferred orientation nonpolar Sexually grown ZnO crystal thin films. The film is also ferromagnetic at room temperature by SQUID test.

Embodiment 3

[0027] The target preparation and film deposition process are the same as in Example 1, the difference is that the molar percentage of Mn is 8%, the molar percentage of Na is 0.5%, and the growth pressure is 100Pa, and the a-axis preferred orientation non-polar growth is also obtained. ZnO crystal thin films. The film is also ferromagnetic at room temperature by SQUID test.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a growing method for no polarity ZnO crystal thin films. The pulsed laser deposition is adopted. Firstly, ZnO, MnO2 and Na2CO3 fine powder are weighted and ground in a ball way, pressed and sintered to obtain ceramic target co-doped with Mn-Na; and then the pulsed laser deposition is used for growing the no polarity ZnO crystal thin films on an under layer. The method has the advantages of mature technique, simple operation, low cost, and easy implementation. The grown thin film has a axis preferred orientation, has room temperature ferromagnetism, is a dilute magnetic semiconductor and can be applied to LEDs and memory devices.

Description

technical field [0001] The invention relates to a growth method of non-polar ZnO film. Background technique [0002] Zinc oxide (ZnO) is a new type of semiconductor material with direct bandgap and wide bandgap. It is an important basic material for the new generation of high-efficiency and energy-saving white light lighting industry, and has become a hot spot in international research. The band gap of ZnO at room temperature is 3.37eV, and the exciton binding energy is as high as 60meV. It can realize high-level exciton recombination luminescence at room temperature or high temperature. Compared with electron-hole pair recombination luminescence, the luminescence intensity is higher and the excitation threshold is lower. , is a photoelectric functional material that is completely comparable to GaN and may replace GaN. But so far, the reported ZnO-based light-emitting diodes (LEDs) have low luminous efficiency and weak brightness. To make ZnO light-emitting devices practic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B23/06C30B29/16
Inventor 叶志镇张利强吕建国何海平朱丽萍张银珠
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com