Spherical sintered ferrite particle, semiconductor sealing resin composition making use of the same and semiconductor device obtained therewith

A technology of resin composition and ferrite, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, iron compounds, etc., can solve the problems of insufficient electromagnetic wave shielding and low complex magnetic permeability of resin compositions, and achieve excellent electromagnetic wave The effect of shielding, good EMC characteristics, and good fluidity

Inactive Publication Date: 2009-06-17
NITTO DENKO CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Preferably, the relative magnetic permeability of the magnetic powder (C) is higher; if it is less than 50, the complex magnetic permeability of the resin composition is low and its electromagnetic wave shielding property may be insufficient

Method used

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  • Spherical sintered ferrite particle, semiconductor sealing resin composition making use of the same and semiconductor device obtained therewith
  • Spherical sintered ferrite particle, semiconductor sealing resin composition making use of the same and semiconductor device obtained therewith
  • Spherical sintered ferrite particle, semiconductor sealing resin composition making use of the same and semiconductor device obtained therewith

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~8

[0138] Embodiment 1~8, comparative example 1~6

[0139]Use biphenyl type epoxy resin (softening point is 105°C, epoxy equivalent is 192), phenol aralkyl resin (softening point is 60°C, hydroxyl equivalent is 169), bromobisphenol A type epoxy resin (softening point 77 ℃, epoxy equivalent of 465) flame retardant, antimony trioxide, tetraphenylphosphonium tetraphenyl borate, carbon black, silane coupling agent of γ-glycidoxypropyl trimethoxysilane , polyethylene wax, spherical silica powder α (spherical fused silica with an average particle size of 8.0 μm and a maximum particle size of 9.0 μm) and spherical silica powder β (spherical fused silica with an average particle size of 1.5 μm, with a maximum particle size of 1.9 μm), and using the above-mentioned spherical sintered ferrites a to k, these were blended in the ratios in Table 3 and Table 4 below. In Examples 4, 5, 7, and 8, two types of spherical sintered ferrite particles each having a different average particle size wer...

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Abstract

A resin composition for semiconductor encapsulation having goodmoldability, of which the cured product has effective electromagnetic wave shieldability, is provided. A resin composition for semiconductor encapsulation, containing spherical sintered ferrite particles having the following properties (a) to (c) : (a) the soluble ion content of the particles is at most 5 ppm; (b) the mean particle size of the particles is from 10 to 50 [mu]m; (c) the crystal structure of the particles by X-ray diffractiometry is a spinel structure.

Description

technical field [0001] The present invention relates to spherical sintered ferrite particles having good electromagnetic wave shielding properties; to a resin composition for encapsulating semiconductors comprising the particles, which is a cured body forming material having good electromagnetic wave shielding properties and good electrical insulation properties; and to A highly reliable semiconductor device manufactured using the resin composition. Background technique [0002] Generally, in the process of manufacturing a semiconductor device, after being bonded to a substrate, the completed semiconductor element is encapsulated with a molding resin such as a thermosetting resin to prevent it from coming into contact with the outside. The molding resin is prepared, for example, by mixing and dispersing a silica powder-based inorganic filler in an epoxy resin. As for the method of encapsulating with a molding resin, such as a transfer molding method has been put into practi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G49/00C08L63/00H01L23/29H01L23/31
CPCC01P2002/32C04B2235/3281H01L2224/48227H01L2924/01004H01L23/295C04B2235/3279C04B2235/763H01L2924/15311H01L2924/12044C01P2006/42C04B2235/79H01L2224/48247H01L2924/01012H01L2224/48091C04B2235/528C04B35/62685H01L2924/01079C01P2006/14C04B35/6263H01L23/3107H01L2224/48465C01G49/0018C04B2235/5445H01L23/552C04B35/2625C08L63/00H01L23/3128H01L2224/45124C04B2235/5472C04B35/62675C04B35/62655C04B2235/5409C04B2235/5436C04B2235/3206C01P2006/22H01L2924/3025C08G59/621H01L24/45C04B2235/3262H01L2924/01019H01L2224/45144C04B35/265H01L2924/0102H01L2924/01025C01P2006/12H01L24/48C09C1/24C04B2235/3284C04B35/62695H01L2224/48235H01L2924/12042H01L2924/14H01L2924/181C01G49/0063C01G49/0072C01P2002/50C01P2004/32C01P2004/51C01P2004/53C01P2004/61C01P2006/80Y10T428/2982H01L2924/00014H01L2924/00H01L2924/00012C01G49/00H01L23/29H01L23/31
Inventor 山本一美阿部雅治山本惠久西本一志土手智博五十岚一雅惠藤拓也多田雅孝冈山克巳小林薰
Owner NITTO DENKO CORP
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