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Non-volatile resistor transition type memory embedded into nano-crystalline granule

A resistance transformation and nanocrystalline technology, applied in static memory, digital memory information, information storage and other directions, can solve the problem of low yield of memory devices, and achieve the effects of simple structure, improved yield and easy integration

Inactive Publication Date: 2009-04-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0009] But one thing is certain, there is a strong relationship between the resistance transition characteristics and the defect states in binary transition metal oxide materials
Because the defect states formed by natural growth are difficult to control artificially, the yield of memory devices based on the resistance transition characteristics of binary transition metal oxide materials is not high at present.

Method used

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  • Non-volatile resistor transition type memory embedded into nano-crystalline granule
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  • Non-volatile resistor transition type memory embedded into nano-crystalline granule

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Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0037] In one embodiment of the present invention, a heavily doped n-type semiconductor substrate is used as the bottom electrode through an electron beam evaporation process. First deposit a 25nm zirconia layer, then deposit a 2nm gold thin film layer, and then deposit a 25nm zirconia layer, and then heat it for 2 minutes under a nitrogen atmosphere and a temperature of 800°C. Annealing to form gold nanocrystalline particles and passivate defects in naturally occurring zirconia. Finally, the upper electrode is deposited to complete the basic structure of the whole device.

[0038] like image 3 as shown, image 3 It is a schematic structural diagram of a resistance switching memory device based on a binary transition ...

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Abstract

The invention relates to the technical field of microelectronic devices and memories and discloses a non-volatile resistive transition memory based on embedded nano-crystalline particles of binary transition metal oxides. The memory comprises an upper conductive electrode layer, a lower conductive electrode layer, a binary transition metal oxide film between the upper conductive electrode layer and the lower conductive electrode layer and nano-crystalline particles embedded in the binary transition metal oxides. With the invention, the processing technology of devices is compatible with the traditional CMOS technology, which can greatly increase the production of the devices and lay foundations for large-scale integration of the devices.

Description

technical field [0001] The invention relates to the technical field of microelectronic devices and memories, in particular to a non-volatile memory device based on the resistance transition characteristics of binary transition metal oxides. Background technique [0002] The main feature of non-volatile memory is that it can keep the stored information for a long time without power on. It has both the characteristics of ROM and high access speed. With the demand for large-capacity and low-power storage in multimedia applications and mobile communications, the market share of non-volatile memory, especially flash memory (Flash), is becoming larger and larger, and is also increasing. The more it becomes a very important memory type. [0003] Flash memory (Flash) is the mainstream of the non-volatile memory currently on the market, but flash memory devices have excessive operating voltage, slow operating speed, insufficient durability, and excessively thin tunneling oxides in t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24G11C11/56
Inventor 管伟华刘明龙世兵贾锐
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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