High precision planarization method for lithium aluminate crystal material

A flattening method and technology of crystal materials, applied in the field of chemical mechanical polishing, can solve problems such as affecting the surface flatness, and achieve the effects of low roughness, simple operation and small damage

Inactive Publication Date: 2011-04-20
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Because the surface of lithium aluminate is easily corroded in acidic medium, a large number of corrosion pits are generated, which affects the smoothness of the surface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High precision planarization method for lithium aluminate crystal material
  • High precision planarization method for lithium aluminate crystal material
  • High precision planarization method for lithium aluminate crystal material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Take 50% SiO with a particle size of 20nm 2 Sol 800g, put into 2500g deionized water while stirring, then weigh 40g KOH to dilute with 260g deionized water and pour into above-mentioned liquid while stirring, then get 200g amine alkali, 200g O 11 -7((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 70 -H) Surfactant was poured into the above liquid while stirring, and after stirring evenly, 4000 g of lithium aluminate substrate polishing liquid was obtained. Then for (100)γ-LiAlO 2 The wafer was chemically mechanically polished for 30 minutes at a temperature of 25°C, a rotational speed of 50 rpm, and a pressure of 0.05 MPa. After polishing, rinse the surface of the wafer with a large amount of deionized water, and then ultrasonically clean it in acetone and absolute ethanol for 10 min respectively. By X-ray diffraction detection, a single orientation (110) SiO is formed on the wafer surface 2 film. Low temperature rapid annealing in air atmosphere at 750℃ for 1h, (110)SiO...

Embodiment 2

[0035] Take 40% SiO with a particle size of 20nm 2 Sol 2000g, put into 1300g deionized water while stirring, then weigh 40g KOH to dilute with 260g deionized water and pour into the above-mentioned liquid while stirring, then get 200g amine base, 200g O 11 -7((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 70 -H) Surfactant was poured into the above liquid while stirring, and after stirring evenly, 4000 g of lithium aluminate substrate polishing liquid was obtained. Then for (100)γ-LiAlO 2 The wafer is chemically mechanically polished for 1 hour at a temperature of 30° C., a rotational speed of 70 rpm, and a pressure of 0.05 MPa. After polishing, rinse the surface of the wafer with a large amount of deionized water, and then ultrasonically clean it in acetone and absolute ethanol for 10 min respectively. By X-ray diffraction detection, a single orientation (110) SiO is formed on the wafer surface 2 film. Rapid annealing at low temperature at 800°C for 30 minutes in air atmosphe...

Embodiment 3

[0037] Take 50% SiO with a particle size of 20nm 2 Sol 1200g, put into 2400g deionized water while stirring, weigh 24g KOH then pour into above-mentioned liquid while stirring with 190g deionized water dilution, get 154g amine base again, 32g O 11 -7((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 70 -H) Surfactant was poured into the above liquid while stirring, and after stirring evenly, 4000 g of lithium aluminate substrate polishing liquid was obtained. Then for (100)γ-LiAlO 2 The wafer was subjected to chemical mechanical polishing for 30 minutes at a temperature of 25° C., a rotational speed of 50 rpm, and a pressure of 0.05 MPa. After polishing, rinse the surface of the wafer with a large amount of deionized water, and then ultrasonically clean it in acetone and absolute ethanol for 10 min respectively. By X-ray diffraction detection, a single orientation (110) SiO is formed on the wafer surface 2 film. Rapid annealing at low temperature at 850°C for 15 minutes in air at...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
surface roughnessaaaaaaaaaa
hardnessaaaaaaaaaa
Login to view more

Abstract

A high-precision planarization method for lithium aluminate crystalline materials is characterized in that the method comprises the following steps: (1) basic SiO2 polishing solution is used for carrying out chemico-mechanical polishing to a Gamma-LiAlO2 wafer on a surface (100) and a surface (302); (2) washing is carried out; and (3) low-temperature rapid annealing is carried out at air atmosphere, wherein the annealing temperature is 750-850 DEG C and the annealing time is 15 minutes to 1 hour. The method which can obtain a lithium aluminate wafer with less than 0.4nm of surface roughness RMS value has the advantages of low cost and high precision.

Description

technical field [0001] The invention belongs to chemical mechanical polishing technology, in particular to a high-precision planarization method for lithium aluminate crystal materials. Background technique [0002] Lithium aluminate crystals have three crystal phases, namely α phase, β phase and γ phase, which are hexagonal, monoclinic and tetragonal structures respectively, among which γ-LiAlO 2 It is a high-temperature stable phase and is used as a substrate material for GaN epitaxy. It belongs to the tetragonal crystal system with space group P4 1 2 1 2. Li + and Al 3+ alternately at the center of the oxygen tetrahedron. γ-LiAlO 2 The structure of the wurtzite structure is very similar to that of GaN, and its matching method with GaN is: half of the Ga replaces the Li site, the other half of the Ga replaces the Al site, and N corresponds to O. Its lattice mismatch with GaN is very small, and the lattice mismatch degrees are -0.3% for a upward mismatch and -1.7% f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/53
Inventor 贾婷婷林辉滕浩周圣明
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap